Patents by Inventor Bassem Tossoun

Bassem Tossoun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240311627
    Abstract: Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations. An example of the systems and methods disclosed herein includes operation of a nonlinear activation device using injection seeding to generate secondary optical signals based on injection locking using a seed signal and an optical power of the seed signal that exceeds a threshold. For example, the system and methods include adjusting a bias applied to an optical source comprising an optically active region positioned between Group III-V semiconductor material and receiving a first optical signal at a first wavelength that injection locks the optical source. The optical source emits a second optical signal at a second wavelength based on injection locking and generates one or more secondary optical signals based on: optical power of the first optical signal and the bias applied to the optical source.
    Type: Application
    Filed: March 14, 2023
    Publication date: September 19, 2024
    Inventors: BASSEM TOSSOUN, DI LIANG
  • Publication number: 20240184182
    Abstract: An example optical device, such as a Mach-Zehnder interferometer (MZI) is presented. The MZI includes a plurality of optical waveguide arms. At least one of the plurality of optical waveguide arms comprises a control gate, an optical waveguide, and a floating gate positioned between the control gate and the optical waveguide and electrically isolated from the optical waveguide and the control gate. The control gate receives a control voltage. The application of the control voltage to the control gate causes charges to accumulate in the floating gate resulting in a non-volatile change in an operating wavelength of the MZI.
    Type: Application
    Filed: December 6, 2022
    Publication date: June 6, 2024
    Inventors: Stanley Cheung, Yuan Yuan, Yiwei Peng, Zhuoran Fang, Bassem Tossoun, Geza Kurczveil, Raymond G. Beausoleil
  • Publication number: 20240004259
    Abstract: A memristor-integrated Mach-Zehnder Interferometer (MZI) device is implemented having the capability to function as a new type of photonic device that can be further leveraged to implement a wide-range of photonic applications, such as photonic chips, PICs, optical FPGAs, and the like. The memristor-integrated MZI device distinctly incorporates the photonic capabilities of an MZI with the resistive memory capabilities of a memristor, in order to create a photonic device that supports optical/photonic functions on a component-level. For example, MZI circuitry can include two waveguides coupled to an output terminal, wherein the MZI circuitry produces an optical signal as output and propagates the output optical signal to the optical terminal; and a memristor integrated on one or the two waveguides of the MZI circuitry, wherein the memristor receives an electrical signal as input and causes a phase shift in the output optical signal from the MZI circuitry.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Bassem Tossoun, Stanley Cheung
  • Patent number: 11422027
    Abstract: An apparatus includes a photodetector and a memristor coupled to the photodetector. The photodetector is configured to receive and convert optical signals to electrical signals to program the memristor to an on or off state. The apparatus further includes a ring resonator coupled to the memristor and configured to modulate light based on the on or off state of the memristor.
    Type: Grant
    Filed: February 16, 2021
    Date of Patent: August 23, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Yuan Yuan, Thomas Van Vaerenbergh, Bassem Tossoun, Di Liang
  • Publication number: 20220260416
    Abstract: An apparatus includes a photodetector and a memristor coupled to the photodetector. The photodetector is configured to receive and convert optical signals to electrical signals to program the memristor to an on or off state. The apparatus further includes a ring resonator coupled to the memristor and configured to modulate light based on the on or off state of the memristor.
    Type: Application
    Filed: February 16, 2021
    Publication date: August 18, 2022
    Inventors: YUAN YUAN, THOMAS VAN VAERENBERGH, BASSEM TOSSOUN, DI LIANG
  • Patent number: 11355899
    Abstract: An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: June 7, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Bassem Tossoun, Di Liang, John Paul Strachan
  • Publication number: 20220069541
    Abstract: An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.
    Type: Application
    Filed: August 27, 2020
    Publication date: March 3, 2022
    Inventors: Bassem Tossoun, Di Liang, John Paul Strachan
  • Patent number: 10935721
    Abstract: A monolithic waveguide-integrated photodiode having a first electroconductive contact layer, a depleted waveguide core layer, an absorption layer, and a second electroconductive contact layer, the refractive index of the first electroconductive contact layer being less than the depleted waveguide core layer, the refractive index of the waveguide core layer being less than the absorption layer, and the refractive index of the second electroconductive contact layer being less than the absorption layer. The waveguide core layer is arranged between the first electroconductive contact layer and the absorption layer and also acts as a depleted carrier drift layer. This arrangement results in greater quantum efficiency and shorter photodiode lengths for a given bandwidth.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: March 2, 2021
    Assignee: University of Virginia Patent Foundation
    Inventors: Bassem Tossoun, Andreas Beling
  • Patent number: 10811549
    Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: October 20, 2020
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Geza Kurczveil, Di Liang, Bassem Tossoun, Chong Zhang, Xiaoge Zeng, Zhihong Huang, Raymond Beausoleil
  • Publication number: 20200243701
    Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.
    Type: Application
    Filed: January 29, 2019
    Publication date: July 30, 2020
    Inventors: Geza Kurczveil, Di Liang, Bassem Tossoun, Chong Zhang, Xiaoge Zeng, Zhihong Huang, Raymond Beausoleil
  • Publication number: 20200116929
    Abstract: A monolithic waveguide-integrated photodiode having a first electroconductive contact layer, a depleted waveguide core layer, an absorption layer, and a second electroconductive contact layer, the refractive index of the first electroconductive contact layer being less than the depleted waveguide core layer, the refractive index of the waveguide core layer being less than the absorption layer, and the refractive index of the second electroconductive contact layer being less than the absorption layer. The waveguide core layer is arranged between the first electroconductive contact layer and the absorption layer and also acts as a depleted carrier drift layer. This arrangement results in greater quantum efficiency and shorter photodiode lengths for a given bandwidth.
    Type: Application
    Filed: April 18, 2018
    Publication date: April 16, 2020
    Applicant: University of Virginia Patent Foundation
    Inventors: Bassem Tossoun, Andreas Beling