Patents by Inventor Bastian Galler
Bastian Galler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11658265Abstract: In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm?2.Type: GrantFiled: December 22, 2021Date of Patent: May 23, 2023Assignee: OSRAM OLED GmbHInventors: Bastian Galler, Jürgen Off
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Publication number: 20220115559Abstract: In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm?2.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Inventors: Bastian Galler, Jürgen Off
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Patent number: 11276800Abstract: A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes growing an n-conductive n-layer, growing an active zone for generating ultraviolet radiation, growing a p-conductive p-layer, producing a p-type semiconductor contact layer having a varying thickness and having a plurality of thickness maxima directly on the p-type layer and applying an ohmic-conductive electrode layer directly on the semiconductor contact layer, wherein each the n-layer and the active zone is based on AlGaN, the p-layer is based on AlGaN or InGaN and the semiconductor contact layer is a GaN layer, wherein the thickness maxima have an area concentration of at least 104 cm?2 in a top view, and wherein the p-layer is only partially covered by the semiconductor contact layer in the top view.Type: GrantFiled: March 13, 2018Date of Patent: March 15, 2022Assignee: OSRAM OLED GMBHInventors: Bastian Galler, Jürgen Off
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Publication number: 20200035858Abstract: A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes growing an n-conductive n-layer, growing an active zone for generating ultraviolet radiation, growing a p-conductive p-layer, producing a p-type semiconductor contact layer having a varying thickness and having a plurality of thickness maxima directly on the p-type layer and applying an ohmic-conductive electrode layer directly on the semiconductor contact layer, wherein each the n-layer and the active zone is based on AlGaN, the p-layer is based on AlGaN or InGaN and the semiconductor contact layer is a GaN layer, wherein the thickness maxima have an area concentration of at least 104 cm?2 in a top view, and wherein the p-layer is only partially covered by the semiconductor contact layer in the top view.Type: ApplicationFiled: March 13, 2018Publication date: January 30, 2020Inventors: Bastian Galler, Jürgen Off
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Patent number: 10522699Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.Type: GrantFiled: November 20, 2018Date of Patent: December 31, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Strauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Patent number: 10475959Abstract: The invention relates to a method for producing a nitride semiconductor component (100), comprising the steps of: —providing a growth substrate (1) having a growth surface (10) formed from a planar area (11) with a plurality of three-dimensionally shaped surface structures (12) on said planar area (11), —growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), growth beginning selectively on a growth area (13) of said growth substrate, and the growth area (13) being less than 45% of the growth surface (10). The invention also relates to a nitride semiconductor component (100) which can be produced according to said method.Type: GrantFiled: June 15, 2016Date of Patent: November 12, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Tobias Gotschke, Bastian Galler, Juergen Off, Werner Bergbauer, Thomas Lehnhardt
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Publication number: 20190109246Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.Type: ApplicationFiled: November 20, 2018Publication date: April 11, 2019Inventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Patent number: 10164134Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.Type: GrantFiled: March 29, 2016Date of Patent: December 25, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Publication number: 20180175243Abstract: The invention relates to a method for producing a nitride semiconductor component (100), comprising the steps of: —providing a growth substrate (1) having a growth surface (10) formed from a planar area (11) with a plurality of three-dimensionally shaped surface structures (12) on said planar area (11), —growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), growth beginning selectively on a growth area (13) of said growth substrate, and the growth area (13) being less than 45% of the growth surface (10). The invention also relates to a nitride semiconductor component (100) which can be produced according to said method.Type: ApplicationFiled: June 15, 2016Publication date: June 21, 2018Inventors: Tobias GOTSCHKE, Bastian GALLER, Juergen OFF, Werner BERGBAUER, Thomas LEHNHARDT
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Publication number: 20180062031Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.Type: ApplicationFiled: March 29, 2016Publication date: March 1, 2018Inventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Patent number: 9059353Abstract: An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0?x1?1, 0?y1?1 and x1+y1?1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0?x2?1, 0?y2?1 and x2+y2?1.Type: GrantFiled: August 30, 2012Date of Patent: June 16, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Simeon Katz, Bastian Galler, Martin Strassburg, Matthias Sabathil, Philipp Drechsel, Werner Bergbauer, Martin Mandl
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Publication number: 20140286369Abstract: An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0?x1?1, 0?y1?1 and x1+y1?1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0?x2?1, 0?y2?1 and x2+y2?1.Type: ApplicationFiled: August 30, 2012Publication date: September 25, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Simeon Katz, Bastian Galler, Martin Strassburg, Matthias Sabathil, Philipp Drechsel, Werner Bergbauer, Martin Mandl