Abstract: The present invention relates to microparticle compositions comprising saflufenacil, to a method of their preparation and to the use of these microparticle compositions for controlling undesired vegetation. In the microparticle compositions saflufenacil is present in the form of microparticles, which comprise solid saflufenacil, which is surrounded or embedded by an aminoplast polymer.

Abstract: A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR1), sulfonate (—SO3R2), sulfate (—O—SO3R3), phosphonate (—P(?O)(OR4)(OR5)), phosphate (—O—P(?O)(OR6)(OR7)), carboxylic acid (—COOH), sulfonic acid (—SO3H), sulfuric acid (—O—SO3—), phosphonic acid (—P(?O)(OH)2), phosphoric acid (—O—P(?O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

Abstract: The present invention relates to microparticle compositions comprising saflufenacil, to a method of their preparation and to the use of these microparticle compositions for controlling undesired vegetation. In the microparticle compositions saflufenacil is present in the form of microparticles, which comprise solid saflufenacil, which is surrounded or embedded by an aminoplast polymer.

Abstract: Provided herein is an agrochemical composition containing a solid multisite fungicide and a dispersing agent, wherein the dispersing agent has a mass average molar mass greater than 5,000 g/mol and is selected from lignin sulfonates and poly(meth)acrylates. Also provided herein is a method of preparing the agrochemical composition comprising the contacting of the solid multisite fungicide and the dispersing agent. Further, provided herein is a method of controlling phytopathogenic fungi, wherein the agrochemical composition is allowed to act on the respective fungi, their environment or the crop plants to be protected from the respective pest, on the soil and/or on undesired plants and/or on the crop plants and/or on their environment. Additionally, provided herein is a use of the dispersing agent for attenuating the phytotoxicity of multisite fungicides; and seed containing said agrochemical composition.

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

Abstract: The present invention relates to a method for coating plastics substrates with an aqueous coating composition (A) comprising at least one organic polymer as binder, said coating composition being applied to at least one surface (O) of the plastics substrate and being subsequently cured, wherein (i) the application of the coating composition (A) is preceded by the application of a carbene-forming compound (C) of the formula (I) below where R1=—(CX2)nX, where X=F or Cl, and n=0 or 1, R2= where R3 and R4 independently of one another =—H, —(CH2)mY, where Y=OH, CO2H, NH2, or Br, and m=0 to 4, with the exception of R3=R4=—H, directly to the surface (O) and its activation to carbene formation, and/or (ii) the coating composition (A) comprises the carbene-forming compound (C), which is activated to carbene formation following application of the coating composition (A). The invention also relates to coatings produced by means of the method, and to coated plastics substrates.

Abstract: A chemical mechanical polishing (CMP) composition comprising (A) Colloidal or fumed inorganic particles or a mixture thereof, (B) a poly (amino acid) and or a salt thereof, and (M) an aqueous medium.

Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers?1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

Abstract: A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.

Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) elemental germanium or (ii) Si1-xGex with 0.1?x<1, wherein the CMP composition (Q) consists essentially of (A) aluminum particles in an amount of from 0.01 to 3 wt. % based on the total weight of the CMP composition (B) at least one oxidizer, (M) an aqueous medium and (N) optionally at least one pH adjusting agent wherein the CMP composition (Q) has a pH of from 2 to 6.

Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Abstract: A process for the manufacture of semiconductor devices is provided. The process comprises the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a polymer comprising at least one N-heterocycle, and (M) an aqueous medium and whereas Q1 has a pH of from 1.5 to 4.5.

Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

Abstract: A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR1), sulfonate (—SO3R2), sulfate (—O—SO3R3), phosphonate (—P(?O) (OR4)(OR5)), phosphate (—O—P(?O)(OR6)(OR7)), carboxylic acid (—COOH), sulfonic acid (—SO3H), sulfuric acid (—O—SO3—), phosphonic acid (—P(?O)(OH)2), phosphoric acid (—O—P(?O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.