Abstract: The invention is based on a method for examining structures on a semiconductor substrate. The structures are imaged with X-radiation in an X-ray microscope. The wavelength of the X-radiation is established as a function of the thickness of the semiconductor substrate in such a way that both a suitable transmission of the X-radiation through the semiconductor substrate and a high-contrast image are obtained. As a result, the structures can be observed continuously with short exposure times, high resolution and even while they are in operation.

Abstract: The invention is based on a method for examining structures on a semiconductor substrate. The structures are imaged with X-radiation in an X-ray microscope. The wavelength of the X-radiation is established as a function of the thickness of the semiconductor substrate in such a way that both a suitable transmission of the X-radiation through the semiconductor substrate and a high-contrast image are obtained. As a result, the structures can be observed continuously with short exposure times, high resolution and even while they are in operation.

Abstract: The description relates to high-transmission condenser-monochromator arrangements providing quasi-monochromatic object illumination and incoherent imaging in X-ray microscopes (5) and are particularly suitable for well-collimated beams from undulators on electron storage rings. As the deflecting optical component, the condenser-monochromator arrangements comprise an off-axis zone plate in transmission (7) or reflection. There is a monochromator diaphragm (11) in the object plane. The exposure aperture of the condenser-monochromator arrangement may be variably set by means of simple plane mirrors (2). The off-axis zone plate (7) and at least one plane mirror (2) are rotated about the optical axis 6 of the X-ray microscope (5) during exposure. In addition, there are fixed elements containing a focusing device with a focusing ring and a downstream system on one or two hollow conical mirrors.