Patents by Inventor Bastien Bruneau

Bastien Bruneau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11600739
    Abstract: An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: March 7, 2023
    Assignees: TOTAL SA, ECOLE POLYTECHNIQUE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Bastien Bruneau, Erik Johnson, Pavel Bulkin, Nada Habka, Gilles Poulain, Nacib Benmammar
  • Publication number: 20200185564
    Abstract: An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.
    Type: Application
    Filed: May 18, 2018
    Publication date: June 11, 2020
    Inventors: Bastien BRUNEAU, Erik JOHNSON, Pavel BULKIN, Nada HABKA, Gilles POULAIN, Nacib BENMAMMAR
  • Patent number: 10319565
    Abstract: A method for generating an ion flow asymmetry in a capacitively coupled radiofrequency plasma reactor comprising a step for energization of a first electrode by a radiofrequency voltage waveform. The standardized voltage waveform is an approximate waveform with a degree of approximation of a standardized sawtooth radiofrequency function having different rising and falling slopes. The degree of approximation of the approximate waveform and the pressure P of the gas are sufficiently high for causing the appearance of an asymmetry of the ion flows between the ion flow at the first electrode and the ion flow at a second electrode.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: June 11, 2019
    Assignee: LE CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Bastien Bruneau, Erik Johnson, Tatiana Novikova, Jean-Paul Booth
  • Publication number: 20180254170
    Abstract: Disclosed is a plasma generating apparatus, for manufacturing devices having patterned layers, including a first electrode assembly and a second electrode assembly placed in a plasma reactor chamber, an electrical power supply for generating a voltage difference between the first electrode assembly and the second electrode assembly. The first electrode assembly includes a plurality of protrusions and a plurality of recesses, the protrusions and recesses being dimensioned and set at respective distances from the surface of the substrate so as to generate a plurality of spatially isolated plasma zones located selectively either between the second electrode assembly and the plurality of recesses or between the second electrode assembly and the plurality of protrusions.
    Type: Application
    Filed: August 30, 2016
    Publication date: September 6, 2018
    Inventors: Erik JOHNSON, Bastien BRUNEAU, Pere ROCA I CABARROCAS, Pavel BULKIN, Nada HABKA
  • Publication number: 20170084428
    Abstract: A method for generating an ion flow asymmetry in a capactively coupled radiofrequency plasma reactor comprising a step for energization of a first electrode by a radiofrequency voltage waveform. The standardized voltage waveform is an approximate waveform with a degree of approximation of a standardized sawtooth radiofrequency function having different rising and falling slopes. The degree of approximation of the approximate waveform and the pressure P of the gas are sufficiently high for causing the appearance of an asymmetry of the ion flows between the ion flow at the first electrode and the ion flow at a second electrode.
    Type: Application
    Filed: April 30, 2015
    Publication date: March 23, 2017
    Applicant: ECOLE POLYTECHNIQUE
    Inventors: Bastien Bruneau, Erik Johnson, Tatiana Novikova, Jean-Paul Booth