Abstract: A memory, a data processing system comprising a memory, a method of operating a memory and a memory compiler apparatus and method of memory compilation are provided, which relate to a memory comprising data storage circuitry to store data values at data locations. Addressing circuitry is provided to access the data value at a storage location in dependence on a received address and readout circuitry to provide an output value in dependence on the accessed data value. The memory further comprises scrambling circuitry to select at least one of: a mapping between the address and the storage location; and a mapping between the data value and the output value, in dependence on a received scrambling value. The mapping between the address and the storage location and/or the data value and the output value can thus be easily and rapidly changed.

Abstract: A memory, a data processing system comprising a memory, a method of operating a memory and a memory compiler apparatus and method of memory compilation are provided, which relate to a memory comprising data storage circuitry to store data values at data locations. Addressing circuitry is provided to access the data value at a storage location in dependence on a received address and readout circuitry to provide an output value in dependence on the accessed data value. The memory further comprises scrambling circuitry to select at least one of: a mapping between the address and the storage location; and a mapping between the data value and the output value, in dependence on a received scrambling value. The mapping between the address and the storage location and/or the data value and the output value can thus be easily and rapidly changed.

Abstract: The present invention provides an apparatus and method for erasing data in a memory device comprising an array of memory cells, and configured to operate from a clock signal. The apparatus includes erase circuitry, responsive to receipt of an erase signal in an asserted state, to perform a forced write operation independently of the clock signal in respect of each memory cell within a predetermined erase region of said array. Further, erase signal generation circuitry is configured to receive a control signal and to maintain said erase signal in a deasserted state provided that the control signal takes the form of a pulse signal having at least a predetermined minimum frequency between pulses. The erase signal generation circuitry is further configured to issue said erase signal in said asserted state if the control signal does not take the form of said pulse signal.

Abstract: The present invention provides an apparatus and method for erasing data in a memory device comprising an array of memory cells, and configured to operate from a clock signal. The apparatus includes erase circuitry, responsive to receipt of an erase signal in an asserted state, to perform a forced write operation independently of the clock signal in respect of each memory cell within a predetermined erase region of said array. Further, erase signal generation circuitry is configured to receive a control signal and to maintain said erase signal in a deasserted state provided that the control signal takes the form of a pulse signal having at least a predetermined minimum frequency between pulses. The erase signal generation circuitry is further configured to issue said erase signal in said asserted state if the control signal does not take the form of said pulse signal.

Abstract: A memory device including an array of memory cells arranged as a plurality of rows and columns. Write circuitry then controls a voltage level of the associated at least one bit line for each of the addressed memory cells to cause write data to be written into the addressed memory cells. In the presence of an asserted erase signal, a decoder circuitry's operation is modified such that it issues, independently of the clock signal, an asserted word line signal on the word line associated with each row in a predetermined erase region of the array. Further, the write circuitry's operation is modified so that it controls the voltage level of the associated at least one bit line for each memory cell in the predetermined erase region, in order to cause erase write data to be written into the memory cells of the predetermined erase region.

Abstract: A timing control circuit comprises at least three current control units coupled in parallel between a first circuit and a second circuit node. The current control units each have an active mode and an inactive mode. The current control units are responsive to a timing trigger event to pass current whose magnitude is dependent on how many of the current control units are in the active mode. The current control units comprise a plurality of groups. Current control units within a same group are responsive to a change in a bit of a control value corresponding to that group to switch together between the active and inactive modes, such that the magnitude of the current is dependent on which of the groups are in the active mode. The signal timing in the associated circuit is varied in dependence on the magnitude of the current.

Abstract: A timing control circuit comprises at least three current control units coupled in parallel between a first circuit and a second circuit node. The current control units each have an active mode and an inactive mode. The current control units are responsive to a timing trigger event to pass current whose magnitude is dependent on how many of the current control units are in the active mode. The current control units comprise a plurality of groups. Current control units within a same group are responsive to a change in a bit of a control value corresponding to that group to switch together between the active and inactive modes, such that the magnitude of the current is dependent on which of the groups are in the active mode. The signal timing in the associated circuit is varied in dependence on the magnitude of the current.

Abstract: A memory device, and method of operation of such a device, are provided. The memory device comprises an array of memory cells arranged in a plurality of rows and a plurality of columns, at least one bit line being associated with each column. Column multiplexer circuitry is coupled to the plurality of columns, for inputting write data into a selected column during a write operation and for outputting an indication of read data sensed from a selected column during a read operation. The column multiplexer circuitry comprises a single pass gate transistor per bit line, and latch circuitry is then used to detect the read data from the indication of read data output by the column multiplexer circuitry during the read operation, and to store that detected read data. Such an approach provides a particularly area efficient construction for the column multiplexer circuitry whilst enabling correct evaluation of the read data held in the addressed memory cell.

Abstract: A memory device, and method of operation of such a device, are provided. The memory device comprises an array of memory cells arranged in a plurality of rows and a plurality of columns, at least one bit line being associated with each column. Column multiplexer circuitry is coupled to the plurality of columns, for inputting write data into a selected column during a write operation and for outputting an indication of read data sensed from a selected column during a read operation. The column multiplexer circuitry comprises a single pass gate transistor per bit line, and latch circuitry is then used to detect the read data from the indication of read data output by the column multiplexer circuitry during the read operation, and to store that detected read data. Such an approach provides a particularly area efficient construction for the column multiplexer circuitry whilst enabling correct evaluation of the read data held in the addressed memory cell.