Abstract: A process for fabricating at least one elementary heterostructure includes producing a heterostructure comprising at least one semiconductor structure of resistivity higher than or equal to 1 ?.cm located between two electrically conductive structures of resistivity lower than or equal to 0.1 ?.cm; cutting the heterostructure by electrical discharge machining so as to define at least the elementary heterostructure; the thickness of the semiconductor structure being smaller than about 1/10th of the thickness of at least one of the electrically conductive structures or of the total thickness of the electrically conductive structures.

Abstract: A process for fabricating at least one elementary heterostructure includes producing a heterostructure comprising at least one semiconductor structure of resistivity higher than or equal to 1 ?·cm located between two electrically conductive structures of resistivity lower than or equal to 0.1 ?·cm; cutting the heterostructure by electrical discharge machining so as to define at least the elementary heterostructure; the thickness of the semiconductor structure being smaller than about 1/10th of the thickness of at least one of the electrically conductive structures or of the total thickness of the electrically conductive structures.

Abstract: An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.

Abstract: Electronic power device comprising: an active layer comprising several lateral and/or semi-lateral components for which the electrodes are located on a front face of the active layer; an interconnection structure comprising several conducting portions to which component electrodes are connected, and located in contact with these electrodes extending parallel to the active layer; a support comprising a front face on which electrically conducting tracks are located, and in which: the interconnection structure is located between the active layer and the support, the conducting portions being placed in contact with the conducting tracks, or the active layer is placed between the interconnection structure and the support, the conducting portions comprising parts extending next to the active layer and connected to the conducting tracks.

Abstract: An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.

Abstract: Electronic power device comprising: an active layer comprising several lateral and/or semi-lateral components for which the electrodes are located on a front face of the active layer; an interconnection structure comprising several conducting portions to which component electrodes are connected, and located in contact with these electrodes extending parallel to the active layer; a support comprising a front face on which electrically conducting tracks are located, and in which: the interconnection structure is located between the active layer and the support, the conducting portions being placed in contact with the conducting tracks, or the active layer is placed between the interconnection structure and the support, the conducting portions comprising parts extending next to the active layer and connected to the conducting tracks.