Abstract: An integrated circuit is formed in a semiconductor substrate. An array of single-photon-avalanche diodes is formed at a front side of the semiconductor substrate. The array includes first and second diodes that are adjacent to each other. A Bragg mirror is positioned between the first and second diodes. The Bragg mirror is configured to prevent a propagation of light between the first and second diodes.

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

Abstract: An integrated circuit is formed in a semiconductor substrate. An array of single-photon-avalanche diodes is formed at a front side of the semiconductor substrate. The array includes first and second diodes that are adjacent to each other. A Bragg mirror is positioned between the first and second diodes. The Bragg mirror is configured to prevent a propagation of light between the first and second diodes.

Abstract: A photosensor is formed within a semiconductor substrate layer having a front side and a back side. An isolation structure delimits an active region of the semiconductor substrate layer which includes a charge collecting region. The front side of semiconductor substrate layer includes a charge transfer circuit. A reflecting mirror is mounted at the back side of the semiconductor substrate layer. The reflecting mirror includes a pupil opening configured to admit light into the active region at the back side. An underside reflective surface of the reflecting mirror is configured to reflect light received from the active region back into the active region.

Abstract: A photosensor is formed within a semiconductor substrate layer having a front side and a back side. An isolation structure delimits an active region of the semiconductor substrate layer which includes a charge collecting region. The front side of semiconductor substrate layer includes a charge transfer circuit. A reflecting mirror is mounted at the back side of the semiconductor substrate layer. The reflecting mirror includes a pupil opening configured to admit light into the active region at the back side. An underside reflective surface of the reflecting mirror is configured to reflect light received from the active region back into the active region.