Patents by Inventor Bau-Tong Dai
Bau-Tong Dai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9040333Abstract: The invention discloses a method for fabricating power-generating module with solar cell. The method includes the steps of providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.Type: GrantFiled: November 8, 2013Date of Patent: May 26, 2015Assignee: National Applied Research LaboratoriesInventors: Jia-Min Shieh, Chang-Hong Shen, Wen-Hsien Huang, Bau-Tong Dai, Jung Y. Huang, Hao-Chung Kuo
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Publication number: 20140065754Abstract: The invention discloses a method for fabricating power-generating module with solar cell. The method includes the steps of providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.Type: ApplicationFiled: November 8, 2013Publication date: March 6, 2014Applicant: NATIONAL APPLIED RESEARCH LABORATORIESInventors: Jia-Min SHIEH, Chang-Hong SHEN, Wen-Hsien HUANG, Bau-Tong DAI, Jung Y. HUANG, Hao-Chung KUO
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Publication number: 20140008726Abstract: A semiconductor structure fabricating method includes the following steps. Firstly, a silicon substrate is provided. The silicon substrate has a first surface and a second surface. In addition, a first semiconductor structure is formed on the first surface of the silicon substrate. Then, the second surface of the silicon substrate is textured as a rough surface. Then, a first electrode layer is formed on the rough surface.Type: ApplicationFiled: July 4, 2012Publication date: January 9, 2014Inventors: Yu-Jen HSIAO, Ting-Jen HSUEH, Jia-Min SHIEH, Yu-Ming YEH, Chee-Wee LIU, Bau-Tong DAI, Fu-Liang YANG
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Publication number: 20120256181Abstract: The invention discloses a power-generating module with solar cell and method for fabricating the same. The power-generating module includes a flexible substrate, a circuit and a solar cell. Both of the circuit and the solar cell are formed on the flexible substrate and are connected with each other, such that the solar cell is capable of providing the power needed by the circuit for operation.Type: ApplicationFiled: June 10, 2011Publication date: October 11, 2012Inventors: Jia-Min SHIEH, Chang-Hong Shen, Wen-Hsien Huang, Bau-Tong Dai, Jung Y. Huang, Hao-Chung Kuo
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Patent number: 8216872Abstract: A light-trapping layer is integrated into a thin-film solar cell. It is integrated as a light-inlet layer, an intermediate layer or a shaded layer with nano-particles embedded in a transparent or non-transparent conductive film. Thus, light stays longer in an absorption layer with photocurrent increased; defects of interface between the absorption layer and the nano-material are decreased; anti-reflective effect to inlet light is enhanced; and a good integrity and a good reliability for long-time light-shining are obtained.Type: GrantFiled: February 21, 2011Date of Patent: July 10, 2012Assignee: National Applied Research LaboratoriesInventors: Jia-Min Shieh, Chang-Hong Shen, Wen-Hsien Huang, Shih-Chuan Wu, Bau-Tong Dai, Jung Y. Huang, Hao-Chung Kuo
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Patent number: 8154007Abstract: A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response.Type: GrantFiled: February 9, 2010Date of Patent: April 10, 2012Assignee: National Applied Research LaboratoriesInventors: Jia-Min Shieh, Wen-Chein Yu, Chao-Kei Wang, Bau-Tong Dai, Ci-Ling Pan, Hao-Chung Kuo, Jung-Y. Huang
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Publication number: 20100213440Abstract: A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response.Type: ApplicationFiled: February 9, 2010Publication date: August 26, 2010Applicant: NATIONAL APPLIED RESEARCH LABORATORIESInventors: Jia-Min Shieh, Wen-Chein Yu, Chao-Kei Wang, Bau-Tong Dai, Ci-Ling Pan, Hao-Chung Kuo, Jung-Y. Huang
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Patent number: 7501051Abstract: The present electropolishing electrolyte comprises an acid solution and an alcohol additive having at least one hydroxy group, wherein the contact angle of the alcohol additive is smaller than the contact angle of the acid solution on a metal layer under electropolishing. The alcohol additive is selected methanol, ethanol and glycerol, and the acid solution comprises phosphoric acid. The volumetric ratio of glycerol to phosphoric acid is between 1:50 and 1:200, and is preferably 1:100. The volumetric ratio is between 1:100 and 1:150 for methanol to phosphoric acid, and between 1:100 and 1:150 for ethanol to phosphoric acid. In addition, the acid solution further comprises an organic acid selected from the group consisting of acetic acid and citric acid. The concentration is between 10000 and 12000 ppm for the acetic acid, and between 500 and 1000 ppm for citric acid.Type: GrantFiled: February 4, 2005Date of Patent: March 10, 2009Assignee: BASF AktiengesellschaftInventors: Jia Min Shieh, Sue Hong Liu, Bau Tong Dai
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Publication number: 20080121955Abstract: There is provided a silicon-based ferroelectric memory material, which includes a mesoporous silica with the nanopores thereon, and high-density arrays of nanocrystalline silicon or germanium quantum dots formed on the inner wall of the nanopores of the mesoporous silica. The silicon-based ferroelectric memory material is substantially composed of silicon and oxygen element, and the process for fabricating such a material is simple and can be done at the low temperature (<400° C.) so that the process for fabricating the silicon-based ferroelectric memory material is compatible with the semiconductor process, and is effective to prevent from cross pollution encountered in the prior art. The ferroelectric memory including the silicon-based ferroelectric memory material has the same advantages, such as high speed and long-life, as those of the conventional ferroelectric memory.Type: ApplicationFiled: November 28, 2006Publication date: May 29, 2008Inventors: Jia-Min Shieh, An-Thung Cho, Yi-Fan Lai, Bau-Tong Dai
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Publication number: 20040214431Abstract: An electropolishing process endpoint detection method is described. The method is applicable to the electropolishing of a metal layer under a fixed current or voltage, wherein a voltage current detector is installed in the electropolishing apparatus. When the electropolishing process is proceeded to the barrier layer, a noticeable change occurs to the electric current or electric voltage because the resistance of the barrier layer is different from that of the metal layer. Based on the change in the saturated current or voltage, the endpoint of the electropolishing process is detected. Further, the voltage or current supply is discontinued by feedback controlling the current or voltage and the electropolishing action is terminated.Type: ApplicationFiled: February 24, 2003Publication date: October 28, 2004Inventors: Jia-Min Shieh, Shih-Chieh Chang, Bau-Tong Dai, Ying-Hao Li, Kwo-Hung Shen
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Publication number: 20030221974Abstract: An electrolytic solution formulation for an electropolishing process comprises at least an acid solution and an organic additive. The acid solution includes phosphoric acid or a mixture of phosphoric acid and sulfuric acid solutions, which can form a passivation layer on the surface of the metal layer. The additive comprises at least an acid group, wherein the diffusion of the organic additive is controlled in which a concentration gradient is formed in the opening of the metal layer. The electropolishing rate at the top of the opening is thereby faster than that at the bottom of the opening. The organic additive is selected from a monocarboxylic acid compound, a dicarboxylic acid compound, a tricarboxylic acid compound, a heterocyclic carboxylic acid compound or a sulfonic acid compound.Type: ApplicationFiled: February 13, 2003Publication date: December 4, 2003Inventors: Jia-Min Shieh, Shih-Chieh Chang, Bau-Tong Dai, Ying-Hao Li, Kwo-Hung Shen
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Patent number: 6440857Abstract: The present invention discloses a two-step CMP method and employed polishing compositions. In the first step, a first polishing slurry is provided to selectively polish the Al-alloy layer. Next, a second polishing slurry is provided to selectively polish the barrier layer. Accordingly, undesired surface non-planarity after the CMP process, such as metal dishing and corrosion of dielectric layers with complicated pattern geometry, can be avoided, and thus the planarization of wafer surfaces can be achieved.Type: GrantFiled: January 25, 2001Date of Patent: August 27, 2002Assignee: Everlight USA, Inc.Inventors: Yuan-Hsin Li, Ming-Shin Tsai, Chien-Hua Chiu, Bau-Tong Dai, Ting-Chen Hu
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Patent number: 6174454Abstract: Slurry formulationf or CMP of organic-added low SOG dielectric was development. The SOG layers with various amount of organic content are subject to polish experiments using silica- and zirconia-based slurries with a variety of additives. The results indicate that, as the amount of organic content in SOG increases, CMP polish rate drops with silica-based KOH-added slurry. On the other hand, zirconia-based slurry could result in higher plish rate for both SOG (>400 nm/min) and thermal oxide. Polish selectivity ranging from 1.2 to 9.1 can be achieved by adding various amount of tetra-alkyl in ammonium hydroxide.Type: GrantFiled: January 29, 1999Date of Patent: January 16, 2001Assignee: National Science CouncilInventors: Ming-Shih Tsai, Shih-Tzung Chang, Bau-Tong Dai, Ying-Lang Wang
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Patent number: 5060190Abstract: An FET ROM and a manufacturing process in which ROM's can be stockpiled after the gates have been formed and the source and drain implants have been made but before the write operation has been performed. At this stage, the unwritten ROM has an array of enhancement mode FET's connected in a logical NAND configuration with an overlying layer of insulation. For a write operation, the insulation is removed to expose the drain and source regions of the FET's, a conductive layer is formed over the array, and the layer is selectively etched to leave a short circuit element between the drain and source of those FET's that are to store a binary 0 and to leave switchable the FET's that are to store a 1.Type: GrantFiled: September 18, 1990Date of Patent: October 22, 1991Assignee: Industrial Technology Research InstituteInventors: Ying-Cheng Chen, Bau-Tong Dai