Patents by Inventor Baxter F. Moody

Baxter F. Moody has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Highly transparent aluminum nitride single crystalline layers and devices made therefrom
    Patent number: 9840790
    Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: December 12, 2017
    Assignees: Hexatech, Inc., National University Corporation Tokyo University of Agriculture and Technology, Tokuyama Corporation
    Inventors: Akinori Koukitu, Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Yuki Kubota, Rafael F. Dalmau, Jinqiao Xie, Baxter F. Moody, Raoul Schlesser, Zlatko Sitar
  • HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND DEVICES MADE THEREFROM
    Publication number: 20150247260
    Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.
    Type: Application
    Filed: August 23, 2012
    Publication date: September 3, 2015
    Inventors: Akinori Koukitu, Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Yuki Kubota, Rafael F. Dalmau, Jinqiao Xie, Baxter F. Moody, RAOUL Schlesser, Zlatko Sitar