Abstract: The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process either comprises exposing the wafer's front and back surfaces to different atmospheres, or thermally annealing two wafers in a face-to-face arrangement.

Abstract: The present invention relates to single crystal silicon, in ingot or wafer form, having an axially symmetric vacancy dominated region and an axially symmetric silicon self-interstitial dominated region. Both the vacancy dominated and the silicon self-interstitial dominated regions are substantially free of agglomerated intrinsic point defects. The vacancy dominated region has a radial width of at least 15 mm and/or includes the central axis and the silicon self-interstitial dominated region is annular in shape and extends radially outward from the vacancy dominated region to the peripheral edge of the ingot or wafer. In ingot form, the axially symmetric regions have an axial length which is at least 20% of the length of the constant diameter portion of the ingot.

Abstract: The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.