Abstract: A touch screen (500) can include electrodes (520, 540) (e.g., first and second touch electrodes, reference electrodes) on opposite sides (e.g., top and bottom) of a substrate (510). In some examples, vias (618, 638) can be used to couple the touch electrodes (520, 540) to conductive connections (518, 538) of flex circuits (502, 522) such that the connections (604, 624) to the flex circuits (502, 522) can be on the same side of the substrate (510) even if the touch electrodes (520, 540) are on opposite sides of the substrate (510). The conductive filling material of the via (618) can make direct contact with the conductive connections (604, 624) of the flex circuits (502, 522), for example.

Abstract: A touch screen (500) can include electrodes (520, 540) (e.g., first and second touch electrodes, reference electrodes) on opposite sides (e.g., top and bottom) of a substrate (510). In some examples, vias (618, 638) can be used to couple the touch electrodes (520, 540) to conductive connections (518, 538) of flex circuits (502, 522) such that the connections (604, 624) to the flex circuits (502, 522) can be on the same side of the substrate (510) even if the touch electrodes (520, 540) are on opposite sides of the substrate (510). The conductive filling material of the via (618) can make direct contact with the conductive connections (604, 624) of the flex circuits (502, 522), for example.

Abstract: Methods and apparatus for treating an organic film such as photoresist with a hydroxyl-generating compound prior to removing the organic film from a substrate are provided. Treatments include exposure to one or more of hydrogen peroxide vapor and water vapor in a non-plasma environment. In some implementations, conditions are such that condensation on the surface is suppressed. Methods include treating high-dose ion-implantation photoresists and post-plasma doping photoresists with little or no material loss and permit mild plasma removal of the photoresist after treatment.

Abstract: Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N2O) and oxygen (O2) in a plasma. Methods also include defluorinating the substrate prior to turning off the plasma to increase etch selectivity of silicon nitride.

Abstract: Methods and apparatus for treating an organic film such as photoresist with a hydroxyl-generating compound prior to removing the organic film from a substrate are provided. Treatments include exposure to one or more of hydrogen peroxide vapor and water vapor in a non-plasma environment. In some implementations, conditions are such that condensation on the surface is suppressed. Methods include treating high-dose ion-implantation photoresists and post-plasma doping photoresists with little or no material loss and permit mild plasma removal of the photoresist after treatment.