Abstract: A photoresist composition is disclosed which is a mixture of a photoactive compound and an alkali soluble resin binder comprises of an unsaturated dicarboxylic acid esterified polymeric material, such as a phenolic resin containing a plurality of acid esterifiable groups esterified with an unsaturated dicarboxylic acid anhydride having the formula ##STR1## wherein R.sub.1 and R.sub.2 are independently selected from hydrogen and alkyl groups containing 1 to 3 carbon atoms, R.sub.3 and R.sub.4 are alkylene groups containing 1 to 3 carbon atoms and x and y are either 0 or 1.

Abstract: A patterned image including on a substrate, a patterned image of a first resist polymeric material and patterned image of a second and different resist material on the first resist polymeric material. The polymeric material contains reactive hydrogen functional groups and/or reactive hydrogen precursor groups. At least the surface layer of the delineated and uncovered first resist polymer material is reacted with a multifunctional organometallic material containing at least two functional groups that are reactive with the functional groups of the polymeric material.

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.