Patents by Inventor Bean-Jun Jin

Bean-Jun Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
    Patent number: 7176533
    Abstract: Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: February 13, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Ae Chung, Myoung-Bum Lee, Young-Pil Kim, Jin-Gyun Kim, Bean-Jun Jin
  • Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus and related structures
    Publication number: 20050095857
    Abstract: Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
    Type: Application
    Filed: November 4, 2004
    Publication date: May 5, 2005
    Inventors: Eun-Ae Chung, Myoung-Bum Lee, Young-Pil Kim, Jin-Gyun Kim, Bean-Jun Jin
  • Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
    Patent number: 6858529
    Abstract: Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
    Type: Grant
    Filed: May 19, 2003
    Date of Patent: February 22, 2005
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Ae Chung, Myoung-Bum Lee, Young-Pil Kim, Jin-Gyun Kim, Bean-Jun Jin
  • Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus and related structures
    Publication number: 20040000693
    Abstract: Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
    Type: Application
    Filed: May 19, 2003
    Publication date: January 1, 2004
    Inventors: Eun-Ae Chung, Myoung-Bum Lee, Young-Pil Kim, Jin-Gyun Kim, Bean-Jun Jin