Abstract: Embodiments of the invention relate generally to methods of consolidating ball milled semiconductors. In one embodiment, the invention provides a thermoelectric material with enhanced thermoelectric (TE) performance, the thermoelectric material including a population of ball-milled particles mixed with a population of inorganic nanocrystals, wherein the inorganic nanocrystals act as a glue.

Abstract: Disclosed herein is a thermoelectric electrolysis system, the system including a thermoelectric device for deriving electricity from heat, an electrolysis device coupled to the thermoelectric device, an oxygen delivery system connected to the electrolysis device; and a hydrogen delivery system connected to the electrolysis device.

Abstract: Disclosed herein are a thermoelectric device produced by a method utilizing consolidation techniques and a method of producing a thermoelectric device. The method can include layering a first powdered conductor in a die, layering a first powdered semiconductor material on the first powdered conductor layer, layering a second powdered conductor in the die, and consolidating each of the layers.

Abstract: Disclosed herein is a thermoelectric module and a method of producing a thermoelectric module via printing techniques. The method can include providing a first ink, the first ink including a first population of n-material semiconductor nanomaterials suspended in a solvent, and providing a second ink, the second ink including a second population of p-material semiconductor nanomaterials suspended in a solvent. Further, the method can include printing the first ink and the second ink on a substrate and applying a conducting layer electronically contacting both the first ink and the second ink printed on the substrate.

Abstract: Thermoelectric materials and methods of making thermoelectric materials having a nanometer mean grain size less than 1 micron. The method includes combining and arc melting constituent elements of the thermoelectric material to form a liquid alloy of the thermoelectric material and casting the liquid alloy of the thermoelectric material to form a solid casting of the thermoelectric material. The method also includes ball milling the solid casting of the thermoelectric material into nanometer mean size particles and sintering the nanometer size particles to form the thermoelectric material having nanometer scale mean grain size.

Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured theromoelectric materials (e.g., modulation doping) are further disclosed.

Abstract: Disclosed herein is a method of crystallizing a semiconductor nanocrystal population including suspending the semiconductor nanocrystal population in a high boiling point solvent to form a solution and heating the solution to a temperature of approximately 100° C. to approximately 400° C. Further disclosed is a method of crystallizing a semiconductor nanocrystal population including drying the semiconductor nanocrystal population into a powder, placing the powder into a ball mill, and ball milling the powder for a duration of time.

Abstract: Disclosed herein is an oxide coated semiconductor nanocrystal population and a method of synthesizing the oxide coated semiconductor nanocrystal population. The method includes coating a semiconductor nanocrystal population with a species capable of being oxidized to create a coated semiconductor nanocrystal population. The method further includes exposing the coated semiconductor nanocrystal population to oxygen to create the oxide coated semiconductor nanocrystal population. Further disclosed herein is a consolidated material and a method of consolidating a material from the oxide coated semiconductor nanocrystal population.

Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

Abstract: A thermoelectric power generating module incorporates compliance into the module using a three-dimensional flexible connector. The flexible connector may relieve thermal stress and improve reliability for thermoelectric modules. In addition, the connector may provide a buffer layer (e.g., cushion) to damp mechanical vibrations. In further embodiments, a thermal interface structure for a thermoelectric device includes a thermally conductive body comprising a first compliant surface for directly interfacing with a first component of the thermoelectric device and a second compliant surface, opposite the first surface, for directly interfacing with a second component of the thermoelectric device.

Abstract: Methods of fabricating a thermoelectric element with reduced yield loss include forming a solid body of thermoelectric material having first dimension of 150 mm or more and thickness dimension of 5 mm or less, and dicing the body into a plurality of thermoelectric legs, without cutting along the thickness dimension of the body. Further methods include providing a metal material over a surface of a thermoelectric material, and hot pressing the metal material and the thermoelectric material to form a solid body having a contact metal layer and a thermoelectric material layer.

Abstract: A power generating system comprising a heat exchanger comprising an inlet, an outlet and a conduit extending along a length of the heat exchanger between the inlet and the outlet, and a plurality of thermally conductive fins provided within the conduit, a packing fraction of the fins increasing from a first packing fraction proximate the inlet to a second packing fraction proximate the outlet; and a plurality of thermoelectric power generators positioned along the length of the heat exchanger, each thermoelectric power generator comprising a hot side, a cold side and a thermoelectric element extending there between, wherein the hot sides of the thermoelectric power generators are in thermal contact with the plurality of fins such that the temperature of each hot side is substantially equal along the length of the heat exchanger.

Abstract: Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

Abstract: Thermoelectric materials and methods of making thermoelectric materials having a nanometer mean grain size less than 1 micron. The method includes combining and arc melting constituent elements of the thermoelectric material to form a liquid alloy of the thermoelectric material and casting the liquid alloy of the thermoelectric material to form a solid casting of the thermoelectric material. The method also includes ball milling the solid casting of the thermoelectric material into nanometer mean size particles and sintering the nanometer size particles to form the thermoelectric material having nanometer scale mean grain size.

Abstract: Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

Abstract: An apparatus includes an evacuated enclosure which comprises a tubular member extending along a longitudinal axis, a radiation absorber disposed in the enclosure and having a front surface and a back surface, the front surface being adapted for exposure to solar radiation so as to generate heat, at least one thermoelectric converter disposed in the enclosure and thermally coupled to the absorber, the converter having a high-temperature end to receive at least a portion of the generated heat, such that a temperature differential is achieved across the at least one thermoelectric converter, a support structure disposed in the enclosure coupled to a low-temperature end of the thermoelectric converter, where the support structure removes heat from a low-temperature end of the thermoelectric converter, and a heat conducting element extending between the support structure and the evacuated enclosure and adapted to transfer heat from the support structure to the enclosure.

Abstract: The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

Abstract: The present invention provides methods for synthesis of IV–VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20° C. to about 360° C., for a duration sufficient for generating nanoparticles as binary alloys of the IV–VI elements.

Abstract: The present invention provides methods for synthesis of IV-VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20° C. to about 360° C., for a duration sufficient for generating nanoparticles as binary alloys of the IV-VI elements.