Patents by Inventor Bed Prasad Sharma

Bed Prasad Sharma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11901175
    Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
    Type: Grant
    Filed: July 7, 2022
    Date of Patent: February 13, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Eric James Shero, Paul Ma, Bed Prasad Sharma, Shankar Swaminathan
  • Publication number: 20230369040
    Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.
    Type: Application
    Filed: July 24, 2023
    Publication date: November 16, 2023
    Inventors: YoungChol Byun, Bed Prasad Sharma, Shankar Swaminathan, Eric James Shero
  • Patent number: 11742198
    Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: August 29, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: YoungChol Byun, Bed Prasad Sharma, Shankar Swaminathan, Eric James Shero
  • Publication number: 20220351958
    Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
    Type: Application
    Filed: July 7, 2022
    Publication date: November 3, 2022
    Inventors: Eric James Shero, Paul Ma, Bed Prasad Sharma, Shankar Swaminathan
  • Patent number: 11424119
    Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: August 23, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Eric James Shero, Paul Ma, Bed Prasad Sharma, Shankar Swaminathan
  • Patent number: 11114294
    Abstract: A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: September 7, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Bed Prasad Sharma, Shankar Swaminathan, YoungChol Byun, Eric James Shero
  • Publication number: 20200283893
    Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.
    Type: Application
    Filed: February 27, 2020
    Publication date: September 10, 2020
    Inventors: YoungChol Byun, Bed Prasad Sharma, Shankar Swaminathan, Eric James Shero
  • Publication number: 20200286726
    Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
    Type: Application
    Filed: February 26, 2020
    Publication date: September 10, 2020
    Inventors: Eric James Shero, Paul Ma, Bed Prasad Sharma, Shankar Swaminathan
  • Publication number: 20200286725
    Abstract: A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.
    Type: Application
    Filed: February 25, 2020
    Publication date: September 10, 2020
    Inventors: Bed Prasad Sharma, Shankar Swaminathan, YoungChol Byun, Eric James Shero