Abstract: Electroless deposition processes for semiconductor device fabrication are provided. In one example, a method for electroless deposition of a metal layer on a wide bandgap semiconductor device includes providing a semiconductor wafer having one or more wide bandgap semiconductor devices. The method includes performing an activation layer deposition process on at least a portion of the semiconductor wafer to deposit an activation layer. At least a portion of the activation layer deposition process comprises an activation layer etchant process. The method includes depositing one or more metal layers on the activation layer using an electroless deposition process. Conducting the activation layer etchant process includes providing the semiconductor wafer in an etchant bath for a first process period; removing the semiconductor wafer from the etchant bath; and after removing the semiconductor wafer from the etchant bath, providing the semiconductor wafer in the etchant bath for a second process period.

Abstract: Electroless deposition processes for semiconductor device fabrication are provided. In one example, a method for electroless deposition of a metal layer on a wide bandgap semiconductor device includes providing a semiconductor wafer having one or more wide bandgap semiconductor devices. The method includes performing an activation layer deposition process on at least a portion of the semiconductor wafer to deposit an activation layer. At least a portion of the activation layer deposition process comprises an activation layer etchant process. The method includes depositing one or more metal layers on the activation layer using an electroless deposition process. Conducting the activation layer etchant process includes providing the semiconductor wafer in an etchant bath for a first process period; removing the semiconductor wafer from the etchant bath; and after removing the semiconductor wafer from the etchant bath, providing the semiconductor wafer in the etchant bath for a second process period.