Abstract: Methods of fabricating isolation regions of semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and at least one trench formed in the workpiece. The at least one trench includes sidewalls, a bottom surface, a lower portion, and an upper portion. A first liner is disposed over the sidewalls and the bottom surface of the at least one trench. A second liner is disposed over the first liner in the lower portion of the at least one trench. A first insulating material is disposed over the second liner in the lower portion of the at least one trench. A second insulating material is disposed over the first insulating material in the upper portion of the at least one trench. The first liner, the second liner, the first insulating material, and the second insulating material comprise an isolation region of the semiconductor device.

Abstract: A method for processing a layer may include: providing a patterned carbon layer over a layer or over a carrier; and carrying out an ion implantation through the patterned carbon layer into the layer or into the carrier.

Abstract: A method for manufacturing a semiconductor device may include: forming a metal layer structure over a semiconductor workpiece; forming a first layer over the metal layer structure, the first layer including a first material; forming at least one opening in the first layer and the metal layer structure; depositing a second layer to fill the at least one opening and at least partially cover a surface of the first layer facing away from the metal layer structure, the second layer including a second material that is different from the first material; removing the second layer from at least the surface of the first layer facing away from the metal layer structure; and removing the first layer.

Abstract: Methods of fabricating isolation regions of semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and at least one trench formed in the workpiece. The at least one trench includes sidewalls, a bottom surface, a lower portion, and an upper portion. A first liner is disposed over the sidewalls and the bottom surface of the at least one trench. A second liner is disposed over the first liner in the lower portion of the at least one trench. A first insulating material is disposed over the second liner in the lower portion of the at least one trench. A second insulating material is disposed over the first insulating material in the upper portion of the at least one trench. The first liner, the second liner, the first insulating material, and the second insulating material comprise an isolation region of the semiconductor device.

Abstract: Methods of fabricating isolation regions of semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and at least one trench formed in the workpiece. The at least one trench includes sidewalls, a bottom surface, a lower portion, and an upper portion. A first liner is disposed over the sidewalls and the bottom surface of the at least one trench. A second liner is disposed over the first liner in the lower portion of the at least one trench. A first insulating material is disposed over the second liner in the lower portion of the at least one trench. A second insulating material is disposed over the first insulating material in the upper portion of the at least one trench. The first liner, the second liner, the first insulating material, and the second insulating material comprise an isolation region of the semiconductor device.

Abstract: In a method of fabricating a semiconductor device, a liner is deposited over a conductive region of a wafer and a stencil layer is deposited over the liner. The stencil layer and the liner are etched to form a stencil pattern for a conductive layer. A second liner is deposited over exposed surfaces of the stencil pattern, and the exposed horizontal surfaces of the second liner are removed by sputtering. A low-k dielectric layer is then deposited over the wafer, and the wafer is planarized down to the stencil pattern by chemical-mechanical polishing. The stencil pattern is removed with a wet etch to form an aperture in the wafer exposing the liner and remaining portions of the second liner. Metal is deposited in the aperture, and the surface of the wafer is replanarized by chemical-mechanical polishing to produce a planar surface for additional metallization layers that may be deposited.