Abstract: A programmable resistor is an e-fuse connecting to a source/drain of a MOS transistor. A voltage is provided to the gate of the MOS transistor to partially blow the programmable resistor. Following that, a resistance comparator is used to compare the resistance of the programmable resistor to a predetermined resistance. If the resistance of the programmable resistor conforms to the predetermined resistance, then the programmable resistor is set. If it does not conform to the predetermined resistance, then it is determined whether partially blowing it again would make it exceed the predetermined resistance. If it will exceed the predetermined resistance, then it is not blown again. If it will not exceed the predetermined resistance, then the resistor is partially blown again so as to approach the predetermined resistance.

Abstract: A programmable resistor is an e-fuse connecting to a source/drain of a MOS transistor. A voltage is provided to the gate of the MOS transistor to partially blow the programmable resistor. Following that, a resistance comparator is used to compare the resistance of the programmable resistor to a predetermined resistance. If the resistance of the programmable resistor conforms to the predetermined resistance, then the programmable resistor is set. If it does not conform to the predetermined resistance, then it is determined whether partially blowing it again would make it exceed the predetermined resistance. If it will exceed the predetermined resistance, then it is not blown again. If it will not exceed the predetermined resistance, then the resistor is partially blown again so as to approach the predetermined resistance.

Abstract: A programmable resistor is an e-fuse connecting to a source/drain of a MOS transistor. According to the method, a voltage is provided to the gate of the MOS transistor to partially blow the programmable resistor. Following that, a resistance comparator is used to compare the resistance of the programmable resistor to a predetermined resistance. If the resistance of the programmable resistor conforms to the predetermined resistance, then the programmable resistor is set. If it does not conform to the predetermined resistance, then it is determined whether partially blowing it again would make it exceed the predetermined resistance. If it will exceed the predetermined resistance, then it is not blown again. If it will not exceed the predetermined resistance, then the resistor is partially blown again so as to approach the predetermined resistance.

Abstract: A method of using an e-fuse device is provided. The e-fuse device includes a poly-fuse having one end connected to a source/drain region of a MOS transistor and the other end biased to a voltage (VFS). In operation, a gate of the MOS transistor receives a step waveform pulse signal. The step waveform pulse signal encompasses a pre-heat voltage (Vp) at a first level during time period (T1-Tp) and a maximum input voltage (VIH) at a second level during time period (Tp-T2). The pre-heat voltage (Vp) is smaller than the maximum input voltage (VIH). The step waveform pulse signal is confined to a minimum input voltage (VIL) before T1 and after T2. Preferably, the time period (T1-Tp) is longer than 5 ?s.

Abstract: A programmable resistor is an e-fuse connecting to a source/drain of a MOS transistor. According to the method, a voltage is provided to the gate of the MOS transistor to partially blow the programmable resistor. Following that, a resistance comparator is used to compare the resistance of the programmable resistor to a predetermined resistance. If the resistance of the programmable resistor conforms to the predetermined resistance, then the programmable resistor is set. If it does not conform to the predetermined resistance, then it is determined whether partially blowing it again would make it exceed the predetermined resistance. If it will exceed the predetermined resistance, then it is not blown again. If it will not exceed the predetermined resistance, then the resistor is partially blown again so as to approach the predetermined resistance.

Abstract: A method of using an e-fuse device is provided. The e-fuse device includes a poly-fuse having one end connected to a source/drain region of a MOS transistor and the other end biased to a voltage (VFS). In operation, a gate of the MOS transistor receives a step waveform pulse signal. The step waveform pulse signal encompasses a pre-heat voltage (Vp) at a first level during time period (T1-Tp) and a maximum input voltage (VIH) at a second level during time period (Tp-T2). The pre-heat voltage (Vp) is smaller than the maximum input voltage (VIH). The step waveform pulse signal is confined to a minimum input voltage (VIL) before T1 and after T2. Preferably, the time period (T1-Tp) is longer than 5 ?s.