Patents by Inventor Bei-Zhun Syu

Bei-Zhun Syu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device
    Patent number: 9773922
    Abstract: A memory device includes: a substrate; a channel layer on the substrate, in which the channel layer includes a T-shape having a horizontal portion with a first end and a second end and a vertical portion having a third end; a gate structure on a side of the vertical portion; an oxide-nitride-oxide (ONO) layer between the gate structure and the vertical portion; a source region on the first end of the horizontal portion; and a drain region on the third end of the vertical portion.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: September 26, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Hsieh Lin, Chia-Fu Hsu, Bei-Zhun Syu