Abstract: A high-frequency and low-dielectric-constant ceramic dielectric material matched with nickel internal electrode and a method for producing capacitor using same. The ceramic dielectric material consists of main crystalline phase, modifying additive and sintering flux. The main crystalline phase is MgZrxSi(1?x)O3, wherein 0.05?x?0.15. The modifying additive is one or more of MnO2, Al2O3, CaO, Bi2O3 and TiO2, and the sintering flux is one or more of B2O3, SiO2, ZnO, Li2O, K2O and BaO. The ceramic dielectric material has good uniformity, and excellent dielectric properties, meets the requirements of COG characteristics in EIA standard, and meets the environmental requirements. The ceramic dielectric material can be sintered under the reducing atmosphere and can be matched with nickel electrodes. The chip multilayer ceramic capacitor made of the ceramic dielectric material and nickel internal electrodes has stable performance.

Abstract: Provided is an anti-reductive high-frequency ceramic dielectric material sintered at low temperature and matched with copper internal electrode, which can be used for producing multi-layer ceramic capacitor with a copper internal electrode. The ceramic dielectric material consists of main crystalline phase, modifying additive and sintering flux. The formula of the main crystalline phase is MgxBa(1-x)ZrySi(1-y)O3, wherein 0.8?x?0.95, 0.05?y?0.2. The modifying additive is one or more of MnO2, CaO, Li2O, Bi2O3 and TiO2, and the sintering flux is one or more of B2O3, SiO2, ZnO, CuO, K2O and BaO. The ceramic dielectric material meets the requirements of COG characteristics by EIA standard, has such characteristics as uniform particle size distribution, high dispersiveness, optimized molding process, eco-friendliness and excellent dielectric properties.

Abstract: A high-frequency and low-dielectric-constant ceramic dielectric material matched with nicket internal electrode and a method for producing capacitor using same. The ceramic dielectric material consists of main crystalline phase, modifying additive and sintering flux. The main crystalline phase is MgZrxSi(1?x)O3, wherein 0.05?x?0.15. The modifying additive is one or more of MnO2, Al2O3, CaO, Bi2O3 and TiO2, and the sintering flux is one or more of B2O3, SiO2, ZnO, Li2O, K2O and BaO. The ceramic dielectric material has good uniformity, and excellent dielectric properties, meets the requirements of COG characteristics in EIA standard, and meets the environmental requirements. The ceramic dielectric material can be sintered under the reducing atmosphere and can be matched with nickel electrodes. The chip multilayer ceramic capacitor made of the ceramic dielectric material and nickel internal electrodes has stable performance.

Abstract: Provided is an anti-reductive high-frequency ceramic dielectric material sintered at low temperature and matched with copper internal electrode, which can be used for producing multi-layer ceramic capacitor with a copper internal electrode. The ceramic dielectric material consists of main crystalline phase, modifying additive and sintering flux. The formula of the main crystalline phase is MgxBa(1?x)ZrySi(1?y)O3, wherein 0.8?0.95, 0.05?y?0.2. The modifying additive is one or more of MnO2, CaO, Li2O, Bi2O3 and TiO2, and the sintering flux is one or more of B2O3, SiO2, ZnO, CuO, K2O and BaO. The ceramic dielectric material meets the requirements of COG characteristics by EIA standard, has such characteristics as uniform particle size distribution, high dispersiveness, optimized molding process, eco-friendliness and excellent dielectric properties.