Patents by Inventor Beihan Wang

Beihan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11792980
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes forming a first source contact portion in a substrate, forming a dielectric stack over the first source contact portion, and forming a slit opening extending in the dielectric stack and exposing the first source contact portion. The method also includes forming a plurality of conductor layers through the slit opening and form a second source contact portion in the slit opening and in contact with the first source contact portion.
    Type: Grant
    Filed: November 22, 2021
    Date of Patent: October 17, 2023
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Ji Xia, Wei Xu, Pan Huang, Wenxiang Xu, Beihan Wang
  • Patent number: 11411014
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, a memory stack on the substrate; and a source contact structure extending vertically through the memory stack. The source contact structure includes a first source contact portion in the substrate and having a conductive material different from the substrate. The source contact structure also includes a second source contact portion above, in contact with, and conductively connected to the first source contact portion.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: August 9, 2022
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Ji Xia, Wei Xu, Pan Huang, Wenxiang Xu, Beihan Wang
  • Publication number: 20220085044
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes forming a first source contact portion in a substrate, forming a dielectric stack over the first source contact portion, and forming a slit opening extending in the dielectric stack and exposing the first source contact portion. The method also includes forming a plurality of conductor layers through the slit opening and form a second source contact portion in the slit opening and in contact with the first source contact portion.
    Type: Application
    Filed: November 22, 2021
    Publication date: March 17, 2022
    Inventors: Ji Xia, Wei Xu, Pan Huang, Wenxiang Xu, Beihan Wang
  • Patent number: 11195853
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, a memory stack above the substrate, and a peripheral contact structure outside of the memory stack and in contact with the substrate. The peripheral contact structure includes a first peripheral contact portion in the substrate and having a conductive material different from the substrate. The peripheral contact structure also includes a second peripheral contact above, in contact with, and conductively connected to the first peripheral contact portion.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: December 7, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Ji Xia, Wei Xu, Pan Huang, Wenxiang Xu, Beihan Wang
  • Publication number: 20210159238
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, a memory stack on the substrate; and a source contact structure extending vertically through the memory stack. The source contact structure includes a first source contact portion in the substrate and having a conductive material different from the substrate. The source contact structure also includes a second source contact portion above, in contact with, and conductively connected to the first source contact portion.
    Type: Application
    Filed: January 10, 2020
    Publication date: May 27, 2021
    Inventors: Ji Xia, Wei Xu, Pan Huang, Wenxiang Xu, Beihan Wang
  • Publication number: 20210159244
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, a memory stack above the substrate, and a peripheral contact structure outside of the memory stack and in contact with the substrate. The peripheral contact structure includes a first peripheral contact portion in the substrate and having a conductive material different from the substrate. The peripheral contact structure also includes a second peripheral contact above, in contact with, and conductively connected to the first peripheral contact portion.
    Type: Application
    Filed: January 10, 2020
    Publication date: May 27, 2021
    Inventors: Ji Xia, Wei Xu, Pan Huang, Wenxiang Xu, Beihan Wang
  • Patent number: 8067442
    Abstract: Compounds having the formula I wherein R1, R2a, R2b, R2c, R3, Y and p are as defined herein and C2-C3 is a single or double bond are Hepatitis C virus NS5b polymerase inhibitors. Also disclosed are compositions and methods for treating an HCV infection and inhibiting HCV replication.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: November 29, 2011
    Assignee: Roche Palo Alto LLC
    Inventors: Elbert Chin, Jim Li, Francisco Xavier Talamas, Beihan Wang
  • Publication number: 20100144758
    Abstract: The application discloses compounds of the Formula I: or a pharmaceutically acceptable salt thereof, wherein, X, R1, R2 R3, R4, R5, R6, R7 and R8 are as defined herein. Also provided are methods of using the compounds for treating diseases associated with the P2X3 and/or a P2X2/3 receptor antagonist and methods of making the compounds.
    Type: Application
    Filed: December 9, 2009
    Publication date: June 10, 2010
    Inventors: Michael Patrick Dillon, Daisy Joe Du Bois, Yingjie Lai, Ronald Charles Hawley, Beihan Wang
  • Publication number: 20100081658
    Abstract: Compounds having the formula I wherein R1, R2a, R2b, R2c, R3, Y and p are as defined herein and C2-C3 is a single or double bond are Hepatitis C virus NS5b polymerase inhibitors. Also disclosed are compositions and methods for treating an HCV infection and inhibiting HCV replication.
    Type: Application
    Filed: September 25, 2009
    Publication date: April 1, 2010
    Inventors: Elbert Chin, Jim Li, Francisco Xavier Talamas, Beihan Wang
  • Publication number: 20070244146
    Abstract: The invention provides compounds of the formula I: or pharmaceutically acceptable salts, solvates or prodrugs thereof, wherein: A, W, X, Y, Z and R1 are as defined herein. Also provided are compositions comprising, methods of preparing, and methods for using the subject compounds.
    Type: Application
    Filed: June 25, 2007
    Publication date: October 18, 2007
    Inventors: Francisco Talamas, Beihan Wang
  • Patent number: 7019007
    Abstract: The invention provides compounds of Formula (I): wherein: R1–R4, A, D, and L have any of the values defined in the specification that are CCR-3 receptor antagonists, pharmaceutical compositions containing them, methods for their use, and methods and intermediates useful for preparing them.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: March 28, 2006
    Assignee: Syntex (U.S.A.) LLC
    Inventors: Daisy Joe Du Bois, Beihan Wang
  • Patent number: 6977265
    Abstract: The invention provides compounds of Formula (I): wherein: R1-R5, A, L, and X have any of the values defined in the specification that are CCR-3 receptor antagonists, pharmaceutical compositions containing them, methods for their use, and methods and intermediates useful for preparing them.
    Type: Grant
    Filed: November 29, 2002
    Date of Patent: December 20, 2005
    Assignee: Roche Palo Alto LLC
    Inventors: Daisy Joe Du Bois, Denis John Kertesz, Eric Brian Sjogren, David Bernard Smith, Beihan Wang
  • Publication number: 20050272762
    Abstract: The invention provides compounds of the formula I: or pharmaceutically acceptable salts, solvates or prodrugs thereof, wherein: A, W, X, Y, Z and R1 are as defined herein. Also provided are compositions comprising, methods of preparing, and methods for using the subject compounds.
    Type: Application
    Filed: May 4, 2005
    Publication date: December 8, 2005
    Inventors: Francisco Talamas, Beihan Wang
  • Patent number: 6906073
    Abstract: The invention provides compounds of Formula (I): wherein: R1-R4, A, L, and X have any of the values defined in the specification that are CCR-3 receptor antagonists, pharmaceutical compositions containing them, methods for their use, and methods and intermediates useful for preparing them.
    Type: Grant
    Filed: November 29, 2002
    Date of Patent: June 14, 2005
    Assignee: Roche Palo Alto LLC
    Inventors: Daisy Joe Du Bois, Denis John Kertesz, Eric Brian Sjogren, David Bernard Smith, Beihan Wang
  • Publication number: 20030229121
    Abstract: The invention provides compounds of Formula (I): 1
    Type: Application
    Filed: November 29, 2002
    Publication date: December 11, 2003
    Applicant: Syntex (U.S.A.) LLC
    Inventors: Daisy Joe Du Bois, Denis John Kertesz, Eric Brian Sjogren, David Bernard Smith, Beihan Wang
  • Publication number: 20030176441
    Abstract: The invention provides compounds of Formula (I): 1
    Type: Application
    Filed: November 29, 2002
    Publication date: September 18, 2003
    Inventors: Daisy Joe Du Bois, Denis John Kertesz, Eric Brian Sjogren, David Bernard Smith, Beihan Wang
  • Publication number: 20030153578
    Abstract: The invention provides compounds of Formula (I): 1
    Type: Application
    Filed: November 27, 2002
    Publication date: August 14, 2003
    Inventors: Daisy Joe Du Bois, Beihan Wang