Patents by Inventor Beiji ZHAO

Beiji ZHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor
    Patent number: 11158702
    Abstract: A gallium nitride high electron mobility transistor and a formation method therefor are provided. The transistor includes: a substrate; a gallium nitride channel layer disposed on the substrate; a first barrier layer disposed on the gallium nitride channel layer; a gate, a source and a drain disposed on the first barrier layer, the source and the drain being respectively disposed on two sides of the gate; and a second barrier layer disposed on a surface of the first barrier layer between the gate and the drain, a side wall of the second barrier layer being connected to a side wall on one side of the gate and being configured to generate two-dimensional hole gas. The high electron mobility transistor has a higher breakdown voltage.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: October 26, 2021
    Assignee: Shanghai Simgui Technology Co., Ltd.
    Inventors: Chen Li, Fawang Yan, Feng Zhang, Beiji Zhao, Chunxue Liu
  • GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING HIGH BREAKDOWN VOLTAGE AND FORMATION METHOD THEREFOR
    Publication number: 20190393300
    Abstract: A gallium nitride high electron mobility transistor and a formation method therefor are provided. The transistor includes: a substrate; a gallium nitride channel layer disposed on the substrate; a first barrier layer disposed on the gallium nitride channel layer; a gate, a source and a drain disposed on the first barrier layer, the source and the drain being respectively disposed on two sides of the gate; and a second barrier layer disposed on a surface of the first barrier layer between the gate and the drain, a side wall of the second barrier layer being connected to a side wall on one side of the gate and being configured to generate two-dimensional hole gas. The high electron mobility transistor has a higher breakdown voltage.
    Type: Application
    Filed: September 3, 2019
    Publication date: December 26, 2019
    Applicant: Shanghai Simgui Technology Co., Ltd.
    Inventors: Chen LI, Fawang YAN, Feng ZHANG, Beiji ZHAO, Chunxue LIU