Abstract: A number of Monolithic Microwave Integrated Circuit (MMIC) devices including combinations of PIN and Schottky diodes, with integrated passive electrical components fabricated and electrically connected among them, are described herein, along with new process techniques for forming the MMIC devices. In one example, a monolithic semiconductor includes a substrate, a plurality of layers of semiconductor materials over the substrate, Schottky and Ohmic contacts on a first subset of the plurality of layers for a Schottky diode, and PIN diode Ohmic contacts on a second subset of the plurality of layers for a PIN diode. The device can also include an etch stop layer between the first subset of the plurality of layers and the second subset of the plurality of layers. The etch stop layer facilitates selective etching and isolation of the Schottky diode from the PIN diode by consecutive etchings.

Abstract: Semiconductor devices are described. In one example, the semiconductor device includes a substrate, a layer of first semiconductor material over the substrate, a layer of second semiconductor material over the layer of first semiconductor material, a first metal contact formed on the layer of first semiconductor material, a second metal contact formed on the layer of second semiconductor material, and a metal via that extends from a backside of the substrate, through the substrate, through the layer of first semiconductor material, and contacts a bottom surface of the first metal contact. In this configuration, a direct electrical connection can be achieved between the backside of the substrate and the metal contact on the layer of first semiconductor material without the need for an additional metal connection, such as a metal air bridge, to the metal contact.

Abstract: A diode semiconductor structure is described. In one example, a diode device includes a substrate, a layer of first semiconductor material of a first doping type, a layer of intrinsic semiconductor material, and a layer of second semiconductor material of a second doping type. The diode device also includes a metal contact formed on the layer of first semiconductor material and a metal via formed from a backside of the substrate, through the substrate, and through the layer of first semiconductor material, where the metal via contacts a bottom surface of the metal contact on the layer of first semiconductor material. In this configuration, a direct electrical connection can be achieved between the backside of the substrate and the metal contact on the layer of first semiconductor material without the need for an additional metal connection, such as a metal air bridge, to the metal contact.

Abstract: A diode structure and a method of fabrication of the diode structure is described. In one example, the diode structure is a PIN diode structure and includes an N-type layer formed on a substrate, an intrinsic layer formed on the N-type layer, and a P-type layer formed on the intrinsic layer. The P-type layer forms an anode of the diode structure, and the anode is formed as a quadrilateral-shaped anode. According to the embodiments, a top surface of the anode can be formed with one or more straight segments, such as a quadrilateral-shaped anode, to reduce at least one of a thermal resistance or an electrical on-resistance. These changes, among others, can improve the overall power handling capability of the PIN diode structure.

Abstract: A diode semiconductor structure is described. In one example, a diode device includes a substrate, a layer of first semiconductor material of a first doping type, a layer of intrinsic semiconductor material, and a layer of second semiconductor material of a second doping type. The diode device also includes a metal contact formed on the layer of first semiconductor material and a metal via formed from a backside of the substrate, through the substrate, and through the layer of first semiconductor material, where the metal via contacts a bottom surface of the metal contact on the layer of first semiconductor material. In this configuration, a direct electrical connection can be achieved between the backside of the substrate and the metal contact on the layer of first semiconductor material without the need for an additional metal connection, such as a metal air bridge, to the metal contact.