Patents by Inventor Ben A. Schmid

Ben A. Schmid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TID hardened and single event transient single event latchup resistant MOS transistors and fabrication process
    Patent number: 9093517
    Abstract: A radiation-hardened transistor is formed in a p-type body. An active region is disposed within the p-type body and has a perimeter defined by a shallow-trench isolation region filled with a dielectric material. Spaced-apart source and drain regions are disposed in the active region, forming a channel therebetween. A polysilicon gate is disposed above, aligned with, and insulated from the channel region. A p-type isolation ring is disposed in the p-type body separating outer edges of at least one of the source and drain regions from the perimeter of the active region. A body contact is disposed in the p-type isolation ring.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: July 28, 2015
    Assignee: Microsemi SoC Corporation
    Inventors: Ben A. Schmid, Fethi Dhaoui, John McCollum
  • TID Hardened and Single Even Transient Single Event Latchup Resistant MOS Transistors and Fabrication Process
    Publication number: 20140291771
    Abstract: A radiation-hardened transistor is formed in a p-type body. An active region is disposed within the p-type body and has a perimeter defined by a shallow-trench isolation region filled with a dielectric material. Spaced-apart source and drain regions are disposed in the active region, forming a channel therebetween. A polysilicon gate is disposed above, aligned with, and insulated from the channel region. A p-type isolation ring is disposed in the p-type body separating outer edges of at least one of the source and drain regions from the perimeter of the active region. A body contact is disposed in the p-type isolation ring.
    Type: Application
    Filed: March 4, 2014
    Publication date: October 2, 2014
    Applicant: MICROSEMI SOC CORPORATION
    Inventors: Ben A. Schmid, Fethi Dhaoui, John McCollum