Patents by Inventor Ben C. Hui

Ben C. Hui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing a titanium or tantalum nitride or nitride silicide
    Patent number: 5603988
    Abstract: Titanium and/or tantalum nitrides or nitride silicides are deposited onto a substrate by chemical vapor deposition of a titanium and/or tantalum silylamido complex.
    Type: Grant
    Filed: June 2, 1995
    Date of Patent: February 18, 1997
    Assignees: Morton International, Inc., International Business Machines Corporation
    Inventors: Michael Shapiro, Ravi Kanjolia, Ben C. Hui, Paul F. Seidler, Karen Holloway, Richard Conti, Jonathan Chapple-Sokol
  • Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping
    Patent number: 5120676
    Abstract: A MOCVD process for depositing an arsenic-containing film or a phosphorous-containing film utilizing a diprimary phosphine or arsine or an unsaturated hydrocarbon phosphine or arsine.
    Type: Grant
    Filed: March 23, 1990
    Date of Patent: June 9, 1992
    Assignee: CVD Incorporated
    Inventors: Andreas A. Melas, Ravi K. Kanjolia, Ben C. Hui