Abstract: A method of making shape-adaptable and spectral-selective distributed optical radiation sources, in the wavelength range between UV and mid-infrared, for therapeutic treatment using passive host medium containing nanocrystals is disclosed. The spectral output of the distributed optical radiation source is controlled by the nanocrystal size distribution that determines the spectral output of fluorescence radiation originating from these nanocrystals from within the said host medium, which contains the said nanocrystals, under excitation by an external source. The size of nanocrystals, or the size distribution of nanocrystals, incorporated in the host medium is selected based on the radiation spectral output required for therapeutic requirements. The passive host medium, incorporating the said nanocrystals, is made of adaptable, geometrically configurable, material that conforms to any desired shape.

Abstract: Phototherapy apparatus, incorporating interconnected radiation sources, such as diode laser cluster radiation devices, and method for bone healing, bone growth stimulation, and bone cartilage regeneration are disclosed. The method consists of applying the said radiation cluster apparatus conformally around the desired area of the bone to be treated and providing irradiation at appropriate wavelengths and power densities for a selected period of time to the said area of the bone structure to be treated. The apparatus incorporates a sufficient number of the diode laser cluster devices, or other appropriate light sources, which are adapted to be placed inside an appropriate brace (e.g., ankle brace or knee brace), or are embedded inside a reconfigurable foam, or are embedded inside deformable gel material, or are embedded within the cast, which facilitate radially-positioned sources for irradiation of the area to be treated.

Abstract: A photonic crystal, and a photonic device having such a photonic crystal, configured by changing its physical geometry in at least one region to alter light propagation and/or confinement. The configuring means may include electrostrictive, piezoelectric or magnetostrictive components of the photonic crystal, or an actuation device affixed to the photonic crystal.

Abstract: A photonic crystal, and a photonic device having such a photonic crystal, configured by changing its physical geometry in at feast one region to alter light propagation and/or confinement, The configuring means may include electrostrictive, piezoelectric or magnetostrictive components of the photonic crystal, or an actuation device affixed to the photonic crystal.

Abstract: Crystalline dielectric lead zirconate titanate thin film composites on metallic foils exhibit high dielectric constants, low dielectric loss (loss tangent of less than 5%) and low leakage current. The lead zirconate titanates may be of the formula PbZrxTiyOz (PZT) wherein x and y are independently from about 0.35 to about 0.65 and z is from about 2.5 to about 5.0. The thin foil dielectric composites can be prepared by a variety of methods including deposition of PZT thin films on brass, platinum, titanium, and stainless steel foils using sol-gel processing, sputtering deposition and chemical vapor deposition.

Abstract: A photonic crystal, and a photonic device having such a photonic crystal, configured by changing its physical geometry in at feast one region to alter light propagation and/or confinement, The configuring means may include electrostrictive, piezoelectric or magnetostrictive components of the photonic crystal, or an actuation device affixed to the photonic crystal.

Abstract: The present invention provides optical fiber devices, which emit optical radiation at pre-selected multiple wavelengths. The fiber devices incorporate semiconductor nanocrystals into the fiber core or cladding which fluoresce when irradiated by light of greater energy than the energy gap of the nanocrystal. The nanocrystals are chosen so that, when irradiated by an excitation source, they fluoresce thereby emiting optical radiation and, thus, act as a light source with tunable wavelength of emission depending on the size of nanocrystal, which is incorporated within the fiber itself. In one embodiment the fiber optic device is a fiber optic diffuser, which emits at multiple wavelengths by incorporating semiconductor nanocrystals having a preselected distribution of sizes, and such multi-wavelength diffusers offer an additional capability of tuning the spectral content of diffused radiation for specific medical or fiber optic communication applications.

Abstract: Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micrometers. In islands of this size stress in the plane of the epitaxially grown layers due to mismatch of the coefficients of thermal expansion of the substrate and epitaxially grown materials is insignificant.

Abstract: Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micrometers. In islands of this size stress in the plane of the epitaxially grown layers due to mismatch of the coefficients of thermal expansion of the substrate and epitaxially grown materials is insignificant.

Abstract: A semiconductor photodetector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. An ohmic contact is made to several of the rods at one end, and an ohmic contact is made to the semiconductor material of the matrix. Incident radiation is directed at a surface of the body containing the opposite ends of the rods. A detector is connected between the two ohmic contacts and detects current flow generated in response to incident radiation impinging on the body.

Abstract: A semiconductor radiation detector having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. A set of contacts spaced along the length of the body each make ohmic contact to several rods at one end of each rod, and an ohmic contact is made to the semiconductor material of the matrix. Incident radiation is directed at a surface of the body which lies parallel to the rods. Detectors connected to each of the contacts along the length of the body detect current flow generated in the vicinity of the rods associated with each contact member by radiation penetrating into the body to that depth.

Abstract: A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.