Patents by Inventor Ben Jin

Ben Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
    Patent number: 7465976
    Abstract: The present invention relates to a Tunnel Field Effect Transistor (TFET). which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The IFET further includes a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.
    Type: Grant
    Filed: May 13, 2005
    Date of Patent: December 16, 2008
    Assignee: Intel Corporation
    Inventors: Jack T. Kavalieros, Matthew V. Metz, Gilbert Dewey, Ben Jin, Justin K. Brask, Suman Datta, Robert S. Chau