Patents by Inventor Ben Long Thai

Ben Long Thai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7524381
    Abstract: A method for controlling magnetostriction in a free layer of a magnetoresistive sensor. A pinned layer structure is deposited and then a spacer layer, preferably Cu is deposited. Oxygen is introduced into the spacer layer. The oxygen can be introduced either during the deposition of the spacer layer or after the spacer layer has been deposited. A free layer structure is then deposited over the spacer layer. A capping layer such as Ta can be deposited over the free layer structure. The sensor is annealed to set the magnetization of the pinned layer. In the process of annealing the sensor the oxygen migrates out of the spacer. After annealing, no significant amount of oxygen is present in either the spacer layer or the free layer structure, and only trace amounts of oxygen are present in the Ta capping layer.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: April 28, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Ben Long Thai, Dulip Ajantha Welipitiya