Patents by Inventor Ben Pang

Ben Pang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for cleaning an exhaust line in a semiconductor processing system
    Patent number: 6689930
    Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: February 10, 2004
    Assignee: Applied Materials Inc.
    Inventors: Ben Pang, David Cheung, William N. Taylor, Jr., Sebastion Raoux, Mark Fodor
  • Apparatus for cleaning an exhaust line in a semiconductor processing system
    Patent number: 6680420
    Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
    Type: Grant
    Filed: December 4, 2000
    Date of Patent: January 20, 2004
    Assignee: Applied Materials Inc.
    Inventors: Ben Pang, David Cheung, William N. Taylor, Jr., Sebastien Raoux, Mark Fodor
  • Method and apparatus for cleaning a vacuum line in a CVD system
    Publication number: 20010016674
    Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
    Type: Application
    Filed: December 4, 2000
    Publication date: August 23, 2001
    Applicant: Applied Materials , Inc.
    Inventors: Ben Pang, David Cheung, William N. Taylor, Sebastien Raoux, Mark Fodor
  • Method and apparatus for cleaning a vacuum line in a CVD system
    Patent number: 6194628
    Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
    Type: Grant
    Filed: September 25, 1995
    Date of Patent: February 27, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Ben Pang, David Cheung, William N. Taylor, Jr., Sebastien Raoux, Mark Fodor
  • Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
    Patent number: 6193802
    Abstract: An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second electrodes having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber. The collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A plasma generation system supplies power to the electrodes to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit.
    Type: Grant
    Filed: October 30, 1996
    Date of Patent: February 27, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Ben Pang, David Cheung, William N. Taylor, Jr., Sebastien Raoux, Mark Fodor