Abstract: A lateral silicon carbide power semiconductor device is disclosed. The device comprises a substrate and a silicon carbide semiconductor structure disposed on the substrate and having a principal surface. The semiconductor structure comprises a layer of first conductivity type disposed on the substrate, and a layer-shaped drift region of a second conductivity type, which is opposite to the first conductivity type, disposed directly on the layer so as to form an interface between the layer and the drift region. The drift region runs laterally along the principal surface between first and second ends. Doping in the drift region and the layer are arranged so as to deplete the drift region. The device comprises a first contact region to the drift region.