Abstract: A smart device control method and apparatus, and a storage medium, relating to the technical field of smart devices.

Abstract: A smart device control method and apparatus, and a storage medium, relating to the technical field of smart devices.

Abstract: Some embodiments of the present invention provide a method of circuit design and circuit simulation. A method for electrical modeling of passive structures of a circuit design wherein the passive structures have DC properties is disclosed. The method comprises constructing a physical topology based on the passive structures of the circuit design, mapping the physical topology to a network of EM modeling elements, and determining parameters of the EM modeling elements to model the passive structures based on electromagnetic simulation data.

Abstract: A method of modeling an integrated circuit includes: specifying a layout for the integrated circuit, wherein the layout includes a plurality of devices arranged in a plurality of layers and a plurality of connections between the layers; specifying locations for a source point and an observation point for the integrated circuit; determining a plurality of static images for the source point and the observation point; determining a plurality of discrete complex images for the source point and the observation point; determining a Green's-function value for the source point and the observation point by combining the static images and the discrete complex images; and saving at least some values based on the Green's-function value.

Abstract: A system and method for modeling an IC (integrated circuit) employs a mesh model and a grid model for separating impedance effects between nearby and far-away pairs of mesh elements. Models for relating currents and voltages can be incrementally adapted from other designs or design elements in applications including mixed-signal, analog and RF (radio frequency) circuits.

Abstract: A system and method for modeling an IC (integrated circuit) employs a mesh model and a grid model for separating impedance effects between nearby and far-away pairs of mesh elements. Models for relating currents and voltages can be incrementally adapted from other designs or design elements in applications including mixed-signal, analog and RF (radio frequency) circuits.

Abstract: A system and method for modeling an IC (integrated circuit) employs a mesh model and a grid model for separating impedance effects between nearby and far-away pairs of mesh elements. Models for relating currents and voltages can be incrementally adapted from other designs or design elements in applications including mixed-signal, analog and RF (radio frequency) circuits.

Abstract: A system and method for modeling an IC (integrated circuit) employs a mesh model and a grid model for separating impedance effects between nearby and far-away pairs of mesh elements. Models for relating currents and voltages can be incrementally adapted from other designs or design elements in applications including mixed-signal, analog and RF (radio frequency) circuits.

Abstract: A process for fabricating Ultra Large Scale Integrated (ULSI) circuits in Silicon On Insulator (SOI) technology in which the device structures, which can be bipolar, FET, or a combination, are formed in vertical silicon sidewalls having insulation under and in back thereof so as to create SKI device structures. The silicon sidewall device SOI structures, when fabricated, take the form of cells with each cell having a plurality of either bipolar devices, FET devices, or a combination of these devices, such as collectors, emitters, bases, sources, drains, and gates interconnected within the planes of the regions of the devices in the cells and can be interconnected within the planes of the regions of devices in adjacent cells. Further, the interconnections to adjacent cells can be made from the back of the silicon sidewalls.