Patents by Inventor Ben Yonkee

Ben Yonkee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Facet on a gallium and nitrogen containing laser diode
    Patent number: 11742631
    Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
    Type: Grant
    Filed: September 16, 2021
    Date of Patent: August 29, 2023
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Hua Huang, Phillip Skahan, Sang-Ho Oh, Ben Yonkee, Alexander Sztein, Qiyuan Wei
  • Facet on a gallium and nitrogen containing laser diode
    Patent number: 11139634
    Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: October 5, 2021
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Hua Huang, Phillip Skahan, Sang-Ho Oh, Ben Yonkee, Alexander Sztein, Qiyuan Wei
  • Facet on a gallium and nitrogen containing laser diode
    Patent number: 10559939
    Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: February 11, 2020
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Hua Huang, Phillip Skahan, Sang-Ho Oh, Ben Yonkee, Alexander Sztein, Qiyuan Wei
  • III-V MICRO-LED ARRAYS AND METHODS FOR PREPARING THE SAME
    Publication number: 20170236807
    Abstract: III-V micro light-emitting diodes (LEDs) are fabricated using a photoelectrochemical (PEC) etch. A sacrificial layer and III-V device layers are epitaxially grown on a host substrate, wherein the III-V device layers are patterned to form the micro-LEDs. The sacrificial layer is removed by a photoelectrochemical (PEC) etch, so as to fully or partially separate the micro-LEDs from the substrate, before or after the micro-LEDs are bonded to a submount or intermediate substrate. The micro-LEDs may be bonded to a submount with a polymer film deposited thereon, wherein the polymer film with the micro-LEDs is subsequently delaminated from the submount. Alternatively, the intermediate substrate may be a transfer medium, wherein the micro-LEDs are separated from the host substrate by mechanical fracturing, and then bonded to a second substrate, after which the intermediate substrate is removed, wherein a third substrate may be bonded to exposed surfaces of the transferred micro-LEDs.
    Type: Application
    Filed: April 28, 2017
    Publication date: August 17, 2017
    Applicant: The Regents of the University of California
    Inventors: David Hwang, Nathan G. Young, Ben Yonkee, Burhan K. Saifaddin, Steven P. DenBaars, James S. Speck, Shuji Nakamura