Patents by Inventor Ben-Zu Wang

Ben-Zu Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing thereof
    Patent number: 9508815
    Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: November 29, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fu-An Li, Cheng-Chun Tsai, Ting-Hsien Chen, Mu-Kai Tung, Ben-Zu Wang, Po-Jen Shih, Hung-Hsin Liang
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
    Publication number: 20160056255
    Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.
    Type: Application
    Filed: October 23, 2015
    Publication date: February 25, 2016
    Inventors: Fu-An LI, Cheng-Chun TSAI, Ting-Hsien CHEN, Mu-Kai TUNG, Ben-Zu WANG, Po-Jen SHIH, Hung-Hsin LIANG
  • Semiconductor device and method for manufacturing thereof
    Patent number: 9202809
    Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: December 1, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fu-An Li, Cheng-Chun Tsai, Ting-Hsien Chen, Mu-Kai Tung, Ben-Zu Wang, Po-Jen Shih, Hung-Hsin Liang
  • Semiconductor Device And Method For Manufacturing Thereof
    Publication number: 20150221640
    Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.
    Type: Application
    Filed: February 6, 2014
    Publication date: August 6, 2015
    Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
    Inventors: Fu-An Li, Cheng-Chun Tsai, Ting-Hsien Chen, Mu-Kai Tung, Ben-Zu Wang, Po-Jen Shih, Hung-Hsin Liang