Abstract: A light-emitting element includes a first light-emitting stacked structure including a first active layer; and a tunneling structure on the light-emitting stacked structure including a first doped semiconductor layer; a first undoped semiconductor layer on the first doped semiconductor layer; a second undoped semiconductor layer on the first undoped semiconductor layer; a third undoped semiconductor layer between the first undoped semiconductor layer and the second undoped semiconductor layer, wherein the third undoped semiconductor layer includes a material different from that of the first undoped semiconductor layer; and a second doped semiconductor layer on the second undoped semiconductor layer, having a different conductivity from that of the first doped semiconductor layer; wherein the tunneling structure has a polarization field enhanced by the third undoped semiconductor layer.