Patents by Inventor Benayad Anass

Benayad Anass has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR FABRICATING A METAL SILICIDE LAYER AND SEMICONDUCTOR DEVICES USING THE SAME
    Publication number: 20120178231
    Abstract: Methods for fabricating a metal silicide layer and for fabricating a semiconductor device having such a metal silicide layer are provided wherein, in an embodiment, the method includes the steps of forming a metal layer on a substrate, performing a first thermal process on the substrate to allow the substrate and the metal layer to react with react other to form a first pre-metal silicide layer, removing an unreacted portion of the metal layer, and performing a second thermal process on the substrate to change the first pre-metal silicide layer into a second pre-metal silicide layer and then to melt the second pre-metal silicide layer to change the second pre-metal silicide layer into a metal silicide layer.
    Type: Application
    Filed: September 23, 2011
    Publication date: July 12, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Bum Kim, Young-Pil Kim, Hyung-Ik Lee, Ki-Hong Kim, Eun-Ha Lee, Jung-Yun Won, Benayad Anass