Patents by Inventor Benedetto Buono

Benedetto Buono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9478629
    Abstract: In one general aspect, a silicon carbide bipolar junction transistor (BJT) can include a collector region, a base region on the collector region, and an emitter region on the base region. The silicon carbide BJT can include a base contact electrically contacting the base region where the base region having an active part interfacing the emitter region. The silicon carbide BJT can also include an intermediate region of semiconductor material having at least a part extending from the active part of the base region to the base contact where the intermediate region having a doping level higher than a doping level of the active part of the base region.
    Type: Grant
    Filed: January 11, 2013
    Date of Patent: October 25, 2016
    Assignee: FAIRCHILD SEMICONDUCTOR CORPORATION
    Inventors: Martin Domeij, Benedetto Buono