Abstract: A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.

Abstract: A memory device enabling a reduced minimal conductance state may be provided. The device comprises a first electrode, a second electrode and phase-change material between the first electrode and the second electrode, wherein the phase-change material enables a plurality of conductivity states depending on the ratio between a crystalline and an amorphous phase of the phase-change material. The memory device comprises additionally a projection layer portion in a region between the first electrode and the second electrode. Thereby, an area directly covered by the phase-change material in the amorphous phase in a reset state of the memory device is larger than an area of the projection layer portion oriented to the phase-change material, such that a discontinuity in the conductance states of the memory device is created and a reduced minimal conductance state of the memory device in a reset state is enabled.

Abstract: A neuromorphic memory element comprises a memristor, a plurality of the neuromorphic memory elements and a method for operating the same may be provided. The memristor comprises an input signal terminal, an output signal terminal, and a control signal terminal, and a memristive active channel comprising a phase change material. The memristive active channel extends longitudinal between the input signal terminal and the output signal terminal, and a control signal voltage at the control signal terminal is configured to represent volatile biological neural processes of the neuromorphic memory element, and a bias voltage between the input signal terminal and the output signal terminal is configured to represent non-volatile biological neural processes of the neuromorphic memory element.

Abstract: A memristor memory device comprises a memristive memory cell, an input terminal, an output terminal, and a gate terminal. The input terminal and the output terminal are directly attached to the memristive memory cell, and the gate terminal is electrically isolated from the memristive memory cell. The gate terminal is configured for receiving an electrical signal for a volatile modulation of a conductance of the memristive memory cell, by which a correction of non-ideal conductance modulations of the memristor memory device is achieved.

Abstract: A memory device enabling a reduced minimal conductance state may be provided. The device comprises a first electrode, a second electrode and phase-change material between the first electrode and the second electrode, wherein the phase-change material enables a plurality of conductivity states depending on the ratio between a crystalline and an amorphous phase of the phase-change material. The memory device comprises additionally a projection layer portion in a region between the first electrode and the second electrode. Thereby, an area directly covered by the phase-change material in the amorphous phase in a reset state of the memory device is larger than an area of the projection layer portion oriented to the phase-change material, such that a discontinuity in the conductance states of the memory device is created and a reduced minimal conductance state of the memory device in a reset state is enabled.

Abstract: A memristor memory device comprises a memristive memory cell, an input terminal, an output terminal, and a gate terminal. The input terminal and the output terminal are directly attached to the memristive memory cell, and the gate terminal is electrically isolated from the memristive memory cell. The gate terminal is configured for receiving an electrical signal for a volatile modulation of a conductance of the memristive memory cell, by which a correction of non-ideal conductance modulations of the memristor memory device is achieved.

Abstract: A neuromorphic memory element comprises a memristor, a plurality of the neuromorphic memory elements and a method for operating the same may be provided. The memristor comprises an input signal terminal, an output signal terminal, and a control signal terminal, and a memristive active channel comprising a phase change material. The memristive active channel extends longitudinal between the input signal terminal and the output signal terminal, and a control signal voltage at the control signal terminal is configured to represent volatile biological neural processes of the neuromorphic memory element, and a bias voltage between the input signal terminal and the output signal terminal is configured to represent non-volatile biological neural processes of the neuromorphic memory element.

Abstract: A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.

Abstract: A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.

Abstract: A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.