Abstract: A semiconductor device includes a semiconductor body having an upper surface, a group of first upper-level metal fingers and second upper-level metal fingers that are arranged alternatingly with one another, wherein each of the first upper-level metal fingers is electrically connected to the semiconductor body by the first lower-level conductive fingers, wherein each of the second upper-level metal fingers is electrically connected to the semiconductor body by the second lower-level conductive fingers, wherein the group of first lower-level conductive fingers and second lower-level conductive fingers defines a connection area over the upper surface, and wherein in the connection area the first upper-level metal fingers are at least partially non-overlapping with the second upper-level metal fingers.

Abstract: In various embodiments, a flip-chip device is provided. The flip-chip device includes a chip having an electrically conductive chip contact, and a carrier having an electrically conductive contact area for contacting the chip contact. The chip contact includes a material which is at least just as easily deformable as a material of the electrically conductive contact area at least during the contacting of the chip contact. The contact area includes a plurality of depressions. A smallest width of each of the depressions is smaller than a smallest width of the chip contact. Each of the distances between adjacent edges of adjacent depressions is smaller than the smallest width of the chip contact. The plurality of depressions in the contact area are formed as tubular depressions. A ratio of diameter to depth of the tubular depressions is in a range of 1:3 to 1:50.