Abstract: Three-dimensional (3D) hierarchical morphologies widely exist in natural and biomimetic materials, which impart preferential functions including liquid and mass transport, energy conversion, and signal transmission for various applications. While notable progress has been made in the design and manufacturing of various hierarchical materials, the state-of-the-art approaches suffer from limited materials selection, high costs, as well as low processing throughput. Herein, by harnessing the configurable elastic crack engineering-controlled formation and configuration of cracks in elastic materials, an effect normally avoided in various industrial processes, the present invention provides a facile and powerful technique to enable the faithful transfer of arbitrary hierarchical structures with broad material compatibility and structural and functional integrity.

Abstract: Three-dimensional (3D) hierarchical morphologies widely exist in natural and biomimetic materials, which impart preferential functions including liquid and mass transport, energy conversion, and signal transmission for various applications. While notable progress has been made in the design and manufacturing of various hierarchical materials, the state-of-the-art approaches suffer from limited materials selection, high costs, as well as low processing throughput. Herein, by harnessing the configurable elastic crack engineering-controlled formation and configuration of cracks in elastic materials, an effect normally avoided in various industrial processes, the present invention provides a facile and powerful technique to enable the faithful transfer of arbitrary hierarchical structures with broad material compatibility and structural and functional integrity.

Abstract: A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I) a, b, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R1 and R2 are side chains; R3 and R4 are each independently H or a side chain; and when a is 0, R3 and R4 are side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; R1 and R2 are side chains except —COOalkyl; and X1, X2 and X3 are independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided.

Abstract: There is presently provided compounds of formula (I), which are useful as p-type semiconductor materials and in devices comprising such p-type semiconductor materials.

Abstract: A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I) a, b, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R1 and R2 are side chains; R3 and R4 are each independently H or a side chain; and when a is 0, R3 and R4 are side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; R1 and R2 are side chains except —COOalkyl; and X1, X2 and X3 are independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided.

Abstract: A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I), a, b, c, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R1 and R2 are side chains; R3 and R4 are each independently H or a side chain; and when a is 0, R3 and R4 are side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; R1 and R2 are side chains except —COOalkyl; and X1, X2 and X3 are independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided.

Abstract: An organic compound represented by the following general formula (I) wherein n is an integer from 1 to 500, inclusive, and R1 and R2 are each independently a moiety having an atom length of from about 8 atoms to about 20 atoms.

Abstract: An organic compound represented by the following general formula (I) and characterized by the conjugation of thieno[3,2-b]thiophene, thiophene and phenylene units in the conjugated compound.

Abstract: There is presently provided compounds of formula (I), which are useful as p-type semiconductor materials and in devices comprising such p-type semiconductor materials.

Abstract: A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I), a, b, c, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R1 and R2 are side chains; R3 and R4 are each independently II or a side chain; and when a is 0, R3 and R4 are side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; R1 and R2 are side chains except —COOalkyl; and X1, X2 and X3 are independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided.

Abstract: An organic compound represented by the following general formula (I) and characterised by the conjugation of thieno[3,2-b]thiophene, thiophene and phenylene units in the conjugated compound.

Abstract: An organic compound represented by the following general formula (I) wherein n is an integer from 1 to 500, inclusive, and R1 and R2 are each independently a moiety having an atom length of from about 8 atoms to about 20 atoms.

Abstract: An electronic device including a dielectric layer including a cellulose derivative is disclosed.

Abstract: A small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3?-position of the other thiophene unit wherein R

Abstract: A small molecular thiophene compound consisting of: at least one divalent linkage; and a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3?-position of

Abstract: A small molecule compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract: A composition comprising a liquid and a plurality of silver-containing nanoparticles with a stabilizer, wherein the silver-containing nanoparticles are a product of a reaction of a silver compound with a reducing agent comprising a hydrazine compound in the presence of a thermally removable stabilizer in a reaction mixture comprising the silver compound, the reducing agent, the stabilizer, and an organic solvent wherein the hydrazine compound is a hydrocarbyl hydrazine, a hydrocarbyl hydrazine salt, a hydrazide, a carbazate, a sulfonohydrazide, or a mixture thereof and wherein the stabilizer includes an organoamine.

Abstract: An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.

Abstract: A process for fabricating a thin film transistor comprising: (a) forming a gate dielectric; (b) forming a layer including a substance comprising a fluorocarbon structure; and (c) forming a semiconductor layer including a thiophene compound comprising one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the layer contacts the gate dielectric and is disposed between the semiconductor layer and the gate dielectric.

Abstract: A process for fabricating a thin film transistor including: (a) depositing a gate dielectric precursor composition, wherein the gate dielectric precursor composition includes a polymer comprising polymerized one or more monomers, wherein the one or more monomers includes an optionally substituted vinyl arylalcohol; and (b) irradiating the gate dielectric precursor composition to crosslink the polymer.