Abstract: The present invention discloses a laser scribing device that produces optimal scribing lines within a target substrate based on its thickness. This is accomplished by generating multiple or an optimum number of focal points, and dynamically adjusting the focal lengths of the focal points to create optimal distances between the scribing lines. The resulting scribing lines are efficient in breaking the target substrate. The position of the focal points and the distance between them are determined based on the thickness of the target substrate, and the distance between focal points or scribing lines can be dynamically adjusted by modifying the focal lengths of the focal points.

Abstract: A transfer apparatus for transferring a plurality of light emitting diode chips, comprising a stage on which a first substrate having the plurality of light emitting diode chips mounted on one surface is placed, a work table on which a second substrate to which the plurality of light emitting diode chips are to be transferred is placed, and a push pin module for transferring the plurality of light emitting diode chips to the second substrate by pushing the other surface of the first substrate in a state that one surface of the first substrate and the second substrate are disposed to face each other, wherein the push pin module includes a plurality of push pin units each including a push pin for pushing the other surface of the first substrate, and the push pin module transfers the plurality of light emitting diode chips corresponding to each push pin of the plurality of push pin units to the second substrate at a time.

Abstract: Provided is a laser scribing device including: a laser light source for outputting a laser beam; a splitter for dividing the laser beam into a first laser beam and a second laser beam; a beam expander telescope for adjusting a divergent angle on a path of the first laser beam or a path of the second laser beam; a beam combiner for combining the first laser beam and the second laser beam; and a light-collecting lens for light-collecting the first and second laser beams that are combined by the beam combiner, wherein the first laser beam and the second laser beam have different focal distances.

Abstract: A transfer apparatus for transferring a plurality of light emitting diode chips, comprising a stage on which a first substrate having the plurality of light emitting diode chips mounted on one surface is placed, a work table on which a second substrate to which the plurality of light emitting diode chips are to be transferred is placed, and a push pin module for transferring the plurality of light emitting diode chips to the second substrate by pushing the other surface of the first substrate in a state that one surface of the first substrate and the second substrate are disposed to face each other, wherein the push pin module includes a plurality of push pin units each including a push pin for pushing the other surface of the first substrate, and the push pin module transfers the plurality of light emitting diode chips corresponding to each push pin of the plurality of push pin units to the second substrate at a time.

Abstract: There is provided a target object processing method capable of self-breaking a target object with a laser beam. The target object processing method includes: generating a laser beam from a laser beam source; correcting a divergence angle of the generated laser beam; and forming a spot by condensing the corrected laser beam to the inside of the target object. A shape or a size of the spot is adjusted by correcting the divergence angle of the laser beam, a phase transformation area is formed within the target object by the spot, and the target object is subject to self-breaking with the phase transformation area as the starting point.

Abstract: There is provided a laser processing method of a sapphire substrate including preparing a sapphire substrate on which plural stacked portions spaced from each other are formed, irradiating a short pulse laser beam from a laser light source, making the laser beam irradiated from the laser light source pass through a beam shaping module, adjusting a position of a light concentrating unit or the sapphire substrate such that the laser beam is concentrated to the inside of the sapphire substrate through the light concentrating unit, and forming a phase transformation area within the sapphire substrate by irradiating the laser beam into the sapphire substrate. The laser beam is introduced into the sapphire substrate while avoiding an area where the stacked portions are formed on the sapphire substrate, so that the phase transformation area is formed within the sapphire substrate.

Abstract: The present invention provides an LED chip testing device that measures characteristics of an LED chip. The LED chip testing device includes: a rotation member that supports the LED chip and rotates the LED chip to a testing position where the characteristics of the LED chip are tested; and a tester installed next to the rotation member and serving to measure the characteristics of the LED chip at the testing position.

Abstract: The present disclosure relates to laser processing and a laser processing apparatus for processing materials using laser. Processing performed after loading a wafer on a work stage and a laser processing apparatus for implementing such processing, among others, are disclosed. The laser processing includes loading a wafer on a work stage; determining the number of chips formed on the wafer loaded on the work stage, performing chip defect inspection and aligning the wafer while moving the work stage; measuring a height of a surface of the wafer loaded on the work stage using a displacement sensor; monitoring output power of a processing laser using a power meter; and shifting the work stage while irradiating a laser beam on the wafer to process the wafer.

Abstract: An apparatus and method for manufacturing a light emitting devices by separating a semiconductor layer from a substrate includes a laser beam source for emitting a laser beam, a mesh-typed mask having a plurality of apertures through which the laser beam passes to provide a plurality of unit beams; and an imaging lens for forming a plurality of beam spots by focusing the plurality of unit beams at an interface between a substrate and a semiconductor layer to separate the substrate from the semiconductor layer.

Abstract: There is provided a laser processing method of a sapphire substrate including preparing a sapphire substrate on which plural stacked portions spaced from each other are formed, irradiating a short pulse laser beam from a laser light source, making the laser beam irradiated from the laser light source pass through a beam shaping module, adjusting a position of a light concentrating unit or the sapphire substrate such that the laser beam is concentrated to the inside of the sapphire substrate through the light concentrating unit, and forming a phase transformation area within the sapphire substrate by irradiating the laser beam into the sapphire substrate. The laser beam is introduced into the sapphire substrate while avoiding an area where the stacked portions are formed on the sapphire substrate, so that the phase transformation area is formed within the sapphire substrate.

Abstract: There is provided a target object processing method capable of self-breaking a target object with a laser beam. The target object processing method includes: generating a laser beam from a laser beam source; correcting a divergence angle of the generated laser beam; and forming a spot by condensing the corrected laser beam to the inside of the target object. A shape or a size of the spot is adjusted by correcting the divergence angle of the laser beam, a phase transformation area is formed within the target object by the spot, and the target object is subject to self-breaking with the phase transformation area as the starting point.

Abstract: The present disclosure relates to laser processing and a laser processing apparatus for processing materials using laser. Processing performed after loading a wafer on a work stage and a laser processing apparatus for implementing such processing, among others, are disclosed. The laser processing includes loading a wafer on a work stage; determining the number of chips formed on the wafer loaded on the work stage, performing chip defect inspection and aligning the wafer while moving the work stage; measuring a height of a surface of the wafer loaded on the work stage using a displacement sensor; monitoring output power of a processing laser using a power meter; and shifting the work stage while irradiating a laser beam on the wafer to process the wafer.

Abstract: The present invention provides an LED chip testing device that measures characteristics of an LED chip. The LED chip testing device includes: a rotation member that supports the LED chip and rotates the LED chip to a testing position where the characteristics of the LED chip are tested; and a tester installed next to the rotation member and serving to measure the characteristics of the LED chip at the testing position.

Abstract: An apparatus and method for manufacturing a light emitting devices by separating a semiconductor layer from a substrate includes a laser beam source for emitting a laser beam, a mesh-typed mask having a plurality of apertures through which the laser beam passes to provide a plurality of unit beams; and an imaging lens for forming a plurality of beam spots by focusing the plurality of unit beams at an interface between a substrate and a semiconductor layer to separate the substrate from the semiconductor layer.