Abstract: The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.

Abstract: The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.

Abstract: The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.

Abstract: A resistor-equipped transistor includes a package that provides an external collector connection node (114, 134), an external emitter connection node (120, 140) and an external base connection node (106, 126). The package contains a substrate upon which a transistor (102, 122), first and second resistors, and first and second diodes are formed. The transistor has an internal collector (118, 138), an internal emitter (120, 140) and an internal base (116, 136) with the first resistor (104, 124) being electrically connected between the internal base and the external base connection node and the second resistor (108, 128) being electrically connected between the internal base and the internal emitter.

Abstract: The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.

Abstract: A resistor-equipped transistor includes a package that provides an external collector connection node (114, 134), an external emitter connection node (120, 140) and an external base connection node (106, 126). The package contains a substrate upon which a transistor (102, 122), first and second resistors, and first and second diodes are formed. The transistor has an internal collector (118, 138), an internal emitter (120, 140) and an internal base (116, 136) with the first resistor (104, 124) being electrically connected between the internal base and the external base connection node and the second resistor (108, 128) being electrically connected between the internal base and the internal emitter.

Abstract: The present invention relates to an ammunition handling system primarily for self-propelled artillery guns (1). According to the invention, the gun (1) in question is provided with carrier arms (19, 20) which are pivotally journalled in the chassis of the gun and which carry special ammunition magazines (21, 22) or cassettes in which a primary requirement of propellant charges (18) and shells (14) is stored. In such instance, the design of the carrier arms (19 and 20) and magazine (21, 22) is such that the magazine may be pivoted by simple manoeuvres forwards from a transport position where they are folded-in, in a direction towards the centre line of the gun, to a second position closely adjacent the loading breech of the gun or the replenishment position for auxiliary systems (13, 17) utilized on loading of the gun. The present invention also encompasses specific designs of the relevant magazines and a piece of ordnance designed in accordance with the inventive concept has herein disclosed.

Abstract: The present invention relates to a method and apparatus for rapid loading of separate-loading ammunition in artillery guns, the shell and propellant charge being placed after one another on or in a carrier being accelerated up to a high velocity centered about the longitudinal axis of the gun barrel. Thereafter, the carrier is rapidly retarded to arrest while the shell and the propellant charge are allowed to continue in the direction of the acceleration to their respective ramming positions in the gun.

Abstract: A fluid flow control valve which is responsive to the pressure drop occurring across the valve in order to maintain a substantially constant volume of fluid flow regardless of the pressures appearing at the upstream and downstream sides of the valve has a valve casing with an inner face that widens outwardly from a fluid inflow end to a fluid outflow end, and a valve member which is convex towards the fluid inflow end of the casing and is axially movable relatively to the casing in order to vary the annular gap between the valve member and the valve casing. Means for sensing the fluid pressures at points spaced from the valve member on the upstream and downstream sides thereof are coupled to a fluid pressure actuating mechanism for acting directly upon the axially movable valve ember in order to vary the axial position of the valve member in accordance with the pressure drop across the valve.

Abstract: Fluid mixing valve means comprising valves in first and second fluid conduits having specific configurations, means coupling said valves for common movement and means coupling the output of said second fluid conduit to said first fluid conduit on the downstream side of said first valve.

Abstract: An air flow control valve, for example for control of air of a ventilating flow in a vertilation system comprises an axially extending valve casing having a venturi-shaped inner face, and an axially movable valve member movable within said valve casing to vary the air flow through the valve. In order that the control movement of the valve member may vary the volume of air flow through the valve according to the same predetermined function regardless of the pressure drop across the valve, or the system in which it is incorporated, the valve casing is shaped to compensate for the variation of the drag coefficient of the valve resulting from movement of the valve member. The invention also comprises a method for determining the required dimensions of a valve casing incorporating such correction.