Patents by Inventor Bengt Goran Gustafsson

Bengt Goran Gustafsson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6541869
    Abstract: In a scalable data processing apparatus, particularly a data storage apparatus, one or more thin-film devices which form a substantially planar layer comprise a plurality of sublayers of thin film. Two or more thin-film devices are provided as an integrated stack of the substantially planar layers which form the thin-film devices, such that the apparatus thereby forms a stacked configuration. Each thin-film device comprises one or more memory areas which form matrix addressable memories and additionally circuit areas which form electronic thin-film circuitry for controlling, driving and addressing memory cells in one or more memories. Each memory device has an interface to every other thin-film device in the apparatus, said interfaces being realized with communication and signal lines as well as supporting circuitry for processing extending vertically through dedicated interface areas in the thin-film device.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: April 1, 2003
    Assignee: Thin Film Electronics ASA
    Inventors: Hans Gude Gudesen, Per-Erik Nordal, Geirr I. Leistad, Rolf Magnue Berggren, Bengt Göran Gustafsson, Johan Roger Axel Karlsson
  • Patent number: 6429457
    Abstract: A field-effect transistor is made with electrodes (2, 4, 5) and isolators (3) in vertically provided layers, such that at least the electrodes (4, 5) and the isolators (3) form a step (6) oriented vertically relative to the first electrode (2) or the substrate (1). Implemented as a junction field-effect transistor (JFET) or a metal-oxide semiconducting field-effect transistor (MOSFET) the electrodes (2, 5) forming respectively the drain and source electrode of the field-effect transistor or vice versa and the electrode (4) the gate electrode of the field-effect transistor. Over the layers in the vertical step (6) an amorphous, polycrystalline or microcrystalline inorganic or organic semiconductor material is provided and forms the active semiconductor of the transistor contacting the gate electrode (8) directly or indirectly and forming a vertically oriented transistor channel (9) of the p or n type between the first (2) and the second (5) electrode.
    Type: Grant
    Filed: September 15, 1999
    Date of Patent: August 6, 2002
    Assignee: Thin Film Electronics ASA
    Inventors: Rolf Magnus Berggren, Bengt Goran Gustafsson, Johan Roger Axel Karlsson
  • Patent number: 5180147
    Abstract: Vibration damper for damping vibrations in a surface (20) of an object (21). The damper consists of an oscillating body (1) which is movably connected to the surface such that it is brought to oscillate so that the oscillating body transmits forces to the object which are principally oppositely directed to the forces which, through vibration, act on the object. The vibration damper displays a locating part (19) made from a shaped permanent material and intended to be fixedly attached to said surface (20) of the object (21). The locating part displays one or several inwardly-directed vibration-transmitting support walls (26-29). The oscillating body (1) is at least partially enclosed in a damping body (10) made from an elastic material, and the damping body is held in the locating part through cooperation with the inwardly directed walls (26-29).
    Type: Grant
    Filed: February 26, 1991
    Date of Patent: January 19, 1993
    Assignee: Forsheda AB
    Inventors: Joachim Andersson, Bengt-Goran Gustafsson