Patents by Inventor Benior Chen

Benior Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8921145
    Abstract: A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: December 30, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Pao Shu, Kelvin Tai, Calvin Hung, Benior Chen
  • Publication number: 20140186986
    Abstract: A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.
    Type: Application
    Filed: March 7, 2014
    Publication date: July 3, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Pao Shu, Kelvin Tai, Calvin Hung, Benior Chen
  • Publication number: 20110263106
    Abstract: One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.
    Type: Application
    Filed: July 5, 2011
    Publication date: October 27, 2011
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jiou-Kang Lee, Chun-Ren "Sean" Cheng, Shang-Ying Tsai, Ting-Hau Wu, Hsiang-Fu "Benior" Chen
  • Publication number: 20090294766
    Abstract: A circuit structure includes a substrate; a first amorphous silicon layer over the substrate; a first glue layer over and adjoining the first amorphous silicon layer; and a second amorphous silicon layer over and adjoining the first glue layer.
    Type: Application
    Filed: June 12, 2008
    Publication date: December 3, 2009
    Inventors: Jiou-Kang Lee, Chun-Ren Sean Cheng, Shang-Ying Tsai, Ting-Hau Wu, Hsiang-Fu Benior Chen