Patents by Inventor Benjamin A. Bonner
Benjamin A. Bonner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9153486Abstract: An apparatus and method for manufacturing an interconnect structure to provide ohmic contact in a semiconductor device is provided. The method includes providing a semiconductor device, such as a transistor, comprising a substrate, a gate dielectric, a gate electrode, and source and drain regions in the substrate. An ultra-thin interfacial dielectric is deposited by chemical vapor deposition (CVD) over the source and drain regions, where the interfacial dielectric can have a thickness between about 3 ? and about 20 ?. The ultra-thin interfacial dielectric is configured to unpin the metal Fermi level from the source and drain regions. Other steps such as the deposition of a metal by CVD and the cleaning of the substrate surface can be performed in an integrated process tool without a vacuum break. The method further includes forming one or more vias through a pre-metal dielectric over the source and drain regions of the substrate.Type: GrantFiled: April 12, 2013Date of Patent: October 6, 2015Assignee: Lam Research CorporationInventors: Reza Arghavani, Jeffrey Marks, Benjamin A. Bonner
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Publication number: 20140308812Abstract: An apparatus and method for manufacturing an interconnect structure to provide ohmic contact in a semiconductor device is provided. The method includes providing a semiconductor device, such as a transistor, comprising a substrate, a gate dielectric, a gate electrode, and source and drain regions in the substrate. An ultra-thin interfacial dielectric is deposited by chemical vapor deposition (CVD) over the source and drain regions, where the interfacial dielectric can have a thickness between about 3 ? and about 20 ?. The ultra-thin interfacial dielectric is configured to unpin the metal Fermi level from the source and drain regions. Other steps such as the deposition of a metal by CVD and the cleaning of the substrate surface can be performed in an integrated process tool without a vacuum break. The method further includes forming one or more vias through a pre-metal dielectric over the source and drain regions of the substrate.Type: ApplicationFiled: April 12, 2013Publication date: October 16, 2014Inventors: Reza Arghavani, Jeffrey Marks, Benjamin A. Bonner
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Publication number: 20140237905Abstract: A chemical mechanical polishing article can be a single contiguous layer having a polishing surface, the layer being an elongated substantially rectangular sheet having a width and a length at least four times greater than the width. Forming a polishing article can include depositing a liquid precursor on a moving belt, at least partially curing the liquid precursor while on the moving belt to form a polishing layer, and detaching the polishing layer from the belt.Type: ApplicationFiled: May 5, 2014Publication date: August 28, 2014Applicant: Applied Materials, Inc.Inventors: Benjamin A. Bonner, Gopalakrishna B. Prabhu, Erik S. Rondum, Gregory E. Menk, Anand N. Iyer, Peter McReynolds, Garlen C. Leung
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Publication number: 20100120335Abstract: The partial contact wafer retaining ring apparatus is disclosed. For example, one disclosed embodiment provides a wafer retaining ring comprising a ring for retaining the wafer, the ring having an inner diameter surface configured to restrict lateral wafer motion, and at least one interface surface configured to interface with a polishing surface. The interface surface comprises a recessed section adjacent to the ring inner diameter, configured to preclude contact between the recessed section and the polishing surface.Type: ApplicationFiled: November 7, 2008Publication date: May 13, 2010Applicant: NOVELLUS SYSTEMS, INC.Inventors: Haoquan Fang, Ivelin Angelov, Brian Severson, Benjamin A. Bonner, Serge Kosche, Patrick J. Lord, Brian J. Brown
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Publication number: 20100112919Abstract: A chemical mechanical polishing article can be a single contiguous layer having a polishing surface, the layer being an elongated substantially rectangular sheet having a width and a length at least four times greater than the width. Forming a polishing article can include depositing a liquid precursor on a moving belt, at least partially curing the liquid precursor while on the moving belt to form a polishing layer, and detaching the polishing layer from the belt.Type: ApplicationFiled: November 3, 2008Publication date: May 6, 2010Inventors: Benjamin A. Bonner, Gopalakrishna B. Prabhu, Erik S. Rondum, Gregory E. Menk, Anand N. Iyer, Peter McReynolds, Garlen C. Leung
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Patent number: 7601050Abstract: A polishing apparatus is described. The polishing apparatus includes a rotatable platen, a drive mechanism to incrementally advance a polishing sheet having a polishing surface in a linear direction across the platen, a subpad on the platen to support the polishing sheet, the subpad having a groove formed therein, and a vacuum source connected to the groove of the subpad and configured to apply a vacuum sufficient to pull portions of the polishing sheet into the groove of the subpad to induce a groove in the polishing surface.Type: GrantFiled: February 15, 2007Date of Patent: October 13, 2009Assignee: Applied Materials, Inc.Inventors: Steven M. Zuniga, Peter McReynolds, Erik S. Rondum, Benjamin A. Bonner, Henry H. Au, Gregory E. Menk, Gopalakrishna B. Prabhu, Anand N. Iyer, Garlen C. Leung
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Publication number: 20090088051Abstract: A polishing article includes an elongated substantially rectangular central portion and a substantially rectangular edge portion. The central portion includes a polishing layer with a polishing surface. The central portion has a width, a length greater than the width and defining a longitudinal axis, and an edge. The edge portion extends from the edge of the central portion, the edge portion is thinner than the central portion, and the polishing layer does not extend onto the edge portion.Type: ApplicationFiled: September 26, 2008Publication date: April 2, 2009Inventors: Gregory E. Menk, Peter McReynolds, Benjamin A. Bonner, Erik S. Rondum, Gopalakrishna B. Prabhu
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Patent number: 7429210Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.Type: GrantFiled: January 23, 2007Date of Patent: September 30, 2008Assignee: Applied Materials, Inc.Inventors: Benjamin A. Bonner, Peter McReynolds, Gregory E. Menk, Anand N. Iyer, Gopalakrishna B. Prabhu, Erik S. Rondum, Robert L. Jackson, Garlen Leung
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Publication number: 20070218693Abstract: A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.Type: ApplicationFiled: May 18, 2007Publication date: September 20, 2007Applicant: Applied Materials, Inc.Inventors: Benjamin Bonner, Anand Iyer, Olivier Nguyen, Donald Chua, Christopher Lee, Shijian Li
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Publication number: 20070212976Abstract: A smart polishing media assembly is provided, along with a polishing system and a method for using the same. In one embodiment, the smart polishing media assembly includes a memory device coupled to a polishing material. The polishing material may be in pad, web or belt form. The memory device generally stores at least one material information, historical use information, and/or conditioning information of the polishing material.Type: ApplicationFiled: March 13, 2006Publication date: September 13, 2007Inventors: Peter McReynolds, Gregory Menk, Benjamin Bonner, Gopalakrishna Prabhu, Erik Rondum, Garlen Leung, Anand Iyer
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Publication number: 20070197141Abstract: A polishing apparatus is described. The polishing apparatus includes a rotatable platen, a drive mechanism to incrementally advance a polishing sheet having a polishing surface in a linear direction across the platen, a subpad on the platen to support the polishing sheet, the subpad having a groove formed therein, and a vacuum source connected to the groove of the subpad and configured to apply a vacuum sufficient to pull portions of the polishing sheet into the groove of the subpad to induce a groove in the polishing surface.Type: ApplicationFiled: February 15, 2007Publication date: August 23, 2007Applicant: Applied Materials, Inc.Inventors: Steven Zuniga, Peter McReynolds, Erik Rondum, Benjamin Bonner, Henry Au, Gregory Menk, Gopalakrishna Prabhu, Anand Iyer, Garlen Leung
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Publication number: 20070197147Abstract: A polishing system is described. The polishing system includes a polishing layer, and a subpad supporting the polishing layer, where the subpad has a spiral groove formed therein.Type: ApplicationFiled: February 15, 2007Publication date: August 23, 2007Applicant: Applied Materials, Inc.Inventors: Erik Rondum, Peter McReynolds, Benjamin Bonner, Gregory Menk, Gopalakrishna Prabhu, Garlen Leung, Anand Iyer
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Publication number: 20070117500Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.Type: ApplicationFiled: January 23, 2007Publication date: May 24, 2007Inventors: BENJAMIN BONNER, Peter Mcreynolds, Gregory Menk, Anand Iyer, Gopalakrishna Prabhu, Erik Rondum, Robert Jackson, Garlen Leung
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Patent number: 7179159Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.Type: GrantFiled: May 2, 2005Date of Patent: February 20, 2007Assignee: Applied Materials, Inc.Inventors: Benjamin A. Bonner, Peter McReynolds, Gregory E. Menk, Anand N. Iyer, Gopalakrishna B. Prabhu, Erik S. Rondum, Robert L. Jackson, Garlen Leung
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Publication number: 20060246831Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.Type: ApplicationFiled: May 2, 2005Publication date: November 2, 2006Inventors: Benjamin Bonner, Peter McReynolds, Gregory Menk, Anand Iyer, Gopalakrishna Prabhu, Erik Rondum, Robert Jackson, Garlen Leung
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Publication number: 20060097219Abstract: A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.Type: ApplicationFiled: October 24, 2005Publication date: May 11, 2006Applicant: Applied Materials, Inc.Inventors: Benjamin Bonner, Anand Iyer, Olivier Nguyen, Donald Chua, Christopher Lee, Shijian Li
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Patent number: 6855043Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane that applies a load to a substrate and a retaining ring. The friction coefficient of the lower surface of the flexible membrane is increased to prevent contact between the substrate and the retaining ring, thereby preventing slurry compaction and buildup and substrate deformation caused by such contact.Type: GrantFiled: July 7, 2000Date of Patent: February 15, 2005Assignee: Applied Materials, Inc.Inventors: Jianshe Tang, Brian J. Brown, Charles C. Garretson, Benjamin A. Bonner, Thomas H. Osterheld, Fred C. Redeker
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Patent number: 6834777Abstract: Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module.Type: GrantFiled: April 7, 2003Date of Patent: December 28, 2004Assignee: Applied Materials, Inc.Inventors: Thomas H. Osterheld, Benjamin A. Bonner, Michael W. Richter
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Patent number: 6811470Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising at least first dielectric material and second dielectric material disposed thereon in a polishing apparatus, polishing the substrate with a first polishing composition having a first selectivity, and polishing the substrate with a second polishing composition having a second selectivity greater than the first selectivity.Type: GrantFiled: July 12, 2002Date of Patent: November 2, 2004Assignee: Applied Materials Inc.Inventors: Benjamin A. Bonner, Anand N. Iyer, Deepak N. Kumar, Thomas H. Osterheld, Wei-Yung Hsu, Yong-Sik R. Kim, Christopher W. Smith, Huanbo Zhang
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Publication number: 20030189060Abstract: Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module.Type: ApplicationFiled: April 7, 2003Publication date: October 9, 2003Applicant: Applied Materials, Inc.Inventors: Thomas H. Osterheld, Benjamin A. Bonner, Michael W. Richter