Abstract: Provided are metal silicide contact forming processes including providing a substrate having a bottom crystalline silicon and di-electric sidewalls. This may be followed by metal layer deposition to form metal layer selectively on the bottom crystalline silicon using a metal halide precursor and a reducing agent. A ratio of a reducing agent flow rate to a metal halide precursor flow rate is at least 10:1, or 10:1-10,000:1. After the metal layer deposition, the substrate is annealed to convert the metal layer to a metal silicide layer without any substrate contamination.

Abstract: An apparatus and method for manufacturing an interconnect structure to provide ohmic contact in a semiconductor device is provided. The method includes providing a semiconductor device, such as a transistor, comprising a substrate, a gate dielectric, a gate electrode, and source and drain regions in the substrate. An ultra-thin interfacial dielectric is deposited by chemical vapor deposition (CVD) over the source and drain regions, where the interfacial dielectric can have a thickness between about 3 ? and about 20 ?. The ultra-thin interfacial dielectric is configured to unpin the metal Fermi level from the source and drain regions. Other steps such as the deposition of a metal by CVD and the cleaning of the substrate surface can be performed in an integrated process tool without a vacuum break. The method further includes forming one or more vias through a pre-metal dielectric over the source and drain regions of the substrate.

Abstract: An apparatus and method for manufacturing an interconnect structure to provide ohmic contact in a semiconductor device is provided. The method includes providing a semiconductor device, such as a transistor, comprising a substrate, a gate dielectric, a gate electrode, and source and drain regions in the substrate. An ultra-thin interfacial dielectric is deposited by chemical vapor deposition (CVD) over the source and drain regions, where the interfacial dielectric can have a thickness between about 3 ? and about 20 ?. The ultra-thin interfacial dielectric is configured to unpin the metal Fermi level from the source and drain regions. Other steps such as the deposition of a metal by CVD and the cleaning of the substrate surface can be performed in an integrated process tool without a vacuum break. The method further includes forming one or more vias through a pre-metal dielectric over the source and drain regions of the substrate.

Abstract: A chemical mechanical polishing article can be a single contiguous layer having a polishing surface, the layer being an elongated substantially rectangular sheet having a width and a length at least four times greater than the width. Forming a polishing article can include depositing a liquid precursor on a moving belt, at least partially curing the liquid precursor while on the moving belt to form a polishing layer, and detaching the polishing layer from the belt.

Abstract: The partial contact wafer retaining ring apparatus is disclosed. For example, one disclosed embodiment provides a wafer retaining ring comprising a ring for retaining the wafer, the ring having an inner diameter surface configured to restrict lateral wafer motion, and at least one interface surface configured to interface with a polishing surface. The interface surface comprises a recessed section adjacent to the ring inner diameter, configured to preclude contact between the recessed section and the polishing surface.

Abstract: A chemical mechanical polishing article can be a single contiguous layer having a polishing surface, the layer being an elongated substantially rectangular sheet having a width and a length at least four times greater than the width. Forming a polishing article can include depositing a liquid precursor on a moving belt, at least partially curing the liquid precursor while on the moving belt to form a polishing layer, and detaching the polishing layer from the belt.

Abstract: A polishing apparatus is described. The polishing apparatus includes a rotatable platen, a drive mechanism to incrementally advance a polishing sheet having a polishing surface in a linear direction across the platen, a subpad on the platen to support the polishing sheet, the subpad having a groove formed therein, and a vacuum source connected to the groove of the subpad and configured to apply a vacuum sufficient to pull portions of the polishing sheet into the groove of the subpad to induce a groove in the polishing surface.

Abstract: A polishing article includes an elongated substantially rectangular central portion and a substantially rectangular edge portion. The central portion includes a polishing layer with a polishing surface. The central portion has a width, a length greater than the width and defining a longitudinal axis, and an edge. The edge portion extends from the edge of the central portion, the edge portion is thinner than the central portion, and the polishing layer does not extend onto the edge portion.

Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.

Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane that applies a load to a substrate and a retaining ring. The friction coefficient of the lower surface of the flexible membrane is increased to prevent contact between the substrate and the retaining ring, thereby preventing slurry compaction and buildup and substrate deformation caused by such contact.

Abstract: Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module.

Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising at least first dielectric material and second dielectric material disposed thereon in a polishing apparatus, polishing the substrate with a first polishing composition having a first selectivity, and polishing the substrate with a second polishing composition having a second selectivity greater than the first selectivity.

Abstract: Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module.

Abstract: Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module.

Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising at least first dielectric material and second dielectric material disposed thereon in a polishing apparatus, polishing the substrate with a first polishing composition having a first selectivity, and polishing the substrate with a second polishing composition having a second selectivity greater than the first selectivity.

Abstract: A multistep method of polishing a semiconductor substrate with a polishing fluid to remove a selected amount of material from the substrate. In one embodiment the method includes polishing the substrate to remove a first portion of the selected amount of material by holding the substrate against a polishing pad with a polishing force and applying a polishing solution to the polishing pad. Next the polishing pad is rinsed with a rinsing fluid, and afterwards the substrate is further polished to remove a second portion of the selected amount of material by holding the substrate against the polishing pad with a polishing force and applying the polishing fluid to the polishing pad.

Abstract: A utility wafer, more specifically, an utility wafer for simulating a workpiece in a semiconductor processing system. The utility wafer includes a first side, a second side and a peripheral edge wherein one or both edges of the peripheral edge are relieved to remove the otherwise sharp edge. In one embodiment, the peripheral edge is polished. The utility wafer is resistant to chipping, stress cracking and breakage when undergoing chemical mechanical planarization.

Abstract: A utility wafer, more specifically, an utility wafer for simulating a workpiece in a semiconductor processing system. The utility wafer includes a first side, a second side and a peripheral edge wherein one or both edges of the peripheral edge are relieved to remove the otherwise sharp edge. In one embodiment, the peripheral edge is polished. The utility wafer is resistant to chipping, stress cracking and breakage when undergoing chemical mechanical planarization.

Abstract: Systems and methods for polishing a substrate with reduced contamination are described. Moist air is directed to one or more surfaces in proximity to the polishing surface and exposed to airborne slurry particles generated during polishing. By maintaining the atmosphere in the vicinity of the exposed surfaces at an elevated relative humidity level, airborne slurry particles adhering to the exposed surfaces remain in suspension and, therefore, may be easily cleaned, e.g., during a high pressure rinse cycle. This feature reduces the likelihood that slurry particles will accumulate on exposed surfaces of the polishing apparatus and flake off while a substrate is being polished, reducing the likelihood of substrate defects caused by such slurry contamination.