Abstract: An apparatus is provided. In the apparatus, there is comprises a substrate with a first region of a first conductivity type, a second region of a second conductivity type that is substantially surrounded by the first region, and a third region of the second conductivity type that is substantially surrounded by the second region. A first dielectric layer is formed over the substrate, and a first conductive layer is formed over the first dielectric layer, which is configured to form a first electrode of a capacitor. A second dielectric layer is formed over the first conductive layer. A plate is formed over the second dielectric layer so as to form a second electrode of the capacitor. A cap is formed over the second dielectric layer, being spaced apart from the plate. A via is electrically coupled to the cap and the third region, extending through the first and second dielectric layers.

Abstract: An apparatus is provided. In the apparatus, there is comprises a substrate with a first region of a first conductivity type, a second region of a second conductivity type that is substantially surrounded by the first region, and a third region of the second conductivity type that is substantially surrounded by the second region. A first dielectric layer is formed over the substrate, and a first conductive layer is formed over the first dielectric layer, which is configured to form a first electrode of a capacitor. A second dielectric layer is formed over the first conductive layer. A plate is formed over the second dielectric layer so as to form a second electrode of the capacitor. A cap is formed over the second dielectric layer, being spaced apart from the plate. A via is electrically coupled to the cap and the third region, extending through the first and second dielectric layers.

Abstract: A thermal shutdown circuit for protecting a main FET that conducts a load current ILOAD. A reference circuit provides a temperature current proportional to temperature. A thermal sensor circuit has a resistor and generates an output signal signaling thermal shutdown when the voltage generated across the resistor by the temperature current exceeds a predetermined value. A sense FET having a size smaller than the main FET conducts a sense current ISENSE proportionately smaller than ILOAD. A current mirror mirrors a scaled current proportional to ISENSE to be conducted through the resistor, the scaled current being scaled so as to cause the voltage generated across the resistor to exceed the predetermined value when ILOAD exceeds a predetermined value.

Abstract: Systems, methods and circuits for regulator minimum load control. In one particular case, a system is provided that includes a load control circuit and a switched load. The load control circuit includes a reference current, and a sense current representative of a load current. In addition, the load control circuit includes a comparator circuit that drives a control signal in response to a comparison between the reference current and the sense current. The switched load is electrically coupled to a load voltage signal to provide loading to the load voltage signal. The switched load is operable to switch between a first loading factor and a second loading factor in response to the control signal.