Patents by Inventor Benjamin Buford

Benjamin Buford has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200105998
    Abstract: A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet, a fixed magnet and a tunnel barrier layer in between, where at least one of the fixed magnet or the free magnet includes two magnetic layers and a spacer layer comprising tungsten in between.
    Type: Application
    Filed: September 27, 2018
    Publication date: April 2, 2020
    Applicant: Intel Corporation
    Inventors: Angeline SMITH, Sasikanth MANIPATRUNI, Christopher WIEGAND, Tofizur RAHMAN, Noriyuki SATO, Benjamin BUFORD
  • Publication number: 20200006637
    Abstract: Embodiments herein relate to a system, apparatus, and/or process for producing a spin orbit torque (SOT) electrode that includes a first layer with a first side to couple with a free layer of a magnetic tunnel junction (MTJ) and a second layer coupled with a second side of the first layer opposite the first side, where a value of an electrical resistance in the first SOT layer is lower than a value of an electrical resistance in the second SOT layer and where a current applied to the SOT electrode is to cause current to preferentially flow in the first SOT layer to cause a magnetic polarization of the free layer to change directions. During production of the SOT electrode, the second layer may act as an etch stop.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Inventors: Tanay GOSAVI, Sasikanth MANIPATRUNI, Chia-Ching LIN, Kaan OGUZ, Christopher WIEGAND, Angeline SMITH, Noriyuki SATO, Kevin O'BRIEN, Benjamin BUFORD, Ian YOUNG, MD Tofizur RAHMAN
  • Publication number: 20200006626
    Abstract: An insertion layer for perpendicular spin orbit torque (SOT) memory devices between the SOT electrode and the free magnetic layer, memory devices and computing platforms employing such insertion layers, and methods for forming them are discussed. The insertion layer is predominantly tungsten and improves thermal stability and perpendicular magnetic anisotropy in the free magnetic layer.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Angeline Smith, Ian Young, Kaan Oguz, Sasikanth Manipatruni, Christopher Wiegand, Kevin O'Brien, Tofizur Rahman, Noriyuki Sato, Benjamin Buford, Tanay Gosavi
  • Publication number: 20200006424
    Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Noriyuki Sato, Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin O'Brien, Tofizur Rahman, Gary Allen, Atm G. Sarwar, Ian Young, Hui Jae Yoo, Christopher Weigand, Benjamin Buford
  • Publication number: 20190386208
    Abstract: An apparatus is provided which comprises: a stack comprising a magnetoelectric (ME such as BiFeO3, (LaBi)FeO3, LuFeO3, PMN-PT, PZT, AlN, SmBiFeO3, Cr2O3, etc.) material and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, graphene, etc.); a magnet adjacent to a first portion of the TMD of the stack; a first interconnect adjacent to the magnet; a second interconnect adjacent to the ME material of the stack; and a third interconnect adjacent to a second portion of the TMD of the stack.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 19, 2019
    Applicant: Intel Corporation
    Inventors: Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Dmitri Nikonov, Benjamin Buford, Kaan Oguz, John J. Plombon, Ian A. Young
  • Publication number: 20190386205
    Abstract: An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.
    Type: Application
    Filed: June 19, 2018
    Publication date: December 19, 2019
    Applicant: Intel Corporation
    Inventors: Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Noriyuki Sato, Kevin O'Brien, Benjamin Buford, Christopher Wiegand, Angeline Smith, Tofizur Rahman, Ian Young
  • Publication number: 20190386662
    Abstract: An apparatus is provided to improve spin injection efficiency from a magnet to a spin orbit coupling material. The apparatus comprises: a first magnet; a second magnet adjacent to the first magnet; a first structure comprising a tunneling barrier; a third magnet adjacent to the first structure; a stack of layers, a portion of which is adjacent to the third magnet, wherein the stack of layers comprises spin-orbit material; and a second structure comprising magnetoelectric material, wherein the second structure is adjacent to the first magnet.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 19, 2019
    Applicant: Intel Corporation
    Inventors: Chia-Ching Lin, Sasikanth Manipatruni, Dmitri Nikonov, Ian A. Young, Benjamin Buford, Tanay Gosavi, Kaan Oguz, John J. Plombon
  • Publication number: 20190385655
    Abstract: An apparatus is provided which comprises: a stack comprising a magnetic insulating material (MI such as EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, or graphene), wherein the magnetic insulating material has a first magnetization; a magnet with a second magnetization, wherein the magnet is adjacent to the TMD of the stack; and an interconnect comprising a spin orbit material, wherein the interconnect is adjacent to the magnet.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 19, 2019
    Applicant: Intel Corporation
    Inventors: Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Dmitri Nikonov, Benjamin Buford, Kaan Oguz, John J. Plombon, Ian A. Young
  • Publication number: 20190326353
    Abstract: A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.
    Type: Application
    Filed: April 23, 2018
    Publication date: October 24, 2019
    Applicant: Intel Corporation
    Inventors: Kevin O'Brien, Benjamin Buford, Kaan Oguz, Noriyuki Sato, Charles Kuo, Mark Doczy