Patents by Inventor Benjamin C. Hoster

Benjamin C. Hoster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7632689
    Abstract: Methods for controlling the profile of a trench of a semiconductor structure comprise the step of depositing a photoresist within a via and overlying a second dielectric layer. An image layer is deposited overlying the photoresist and is patterned to form a first trench having a first width and a second width that are not equal and a first angle. The photoresist is dry etched using dry etch parameters, at least one of which is selected based on the first angle and the first and the second widths of the first trench to form a second trench in the photoresist. The second dielectric layer is etched to form a third trench.
    Type: Grant
    Filed: October 3, 2006
    Date of Patent: December 15, 2009
    Assignee: Spansion LLC
    Inventors: Benjamin C. Hoster, William S. Bass
  • Publication number: 20080090408
    Abstract: Methods for controlling the profile of a trench of a semiconductor structure comprise the step of depositing a photoresist within a via and overlying a second dielectric layer. An image layer is deposited overlying the photoresist and is patterned to form a first trench having a first width and a second width that are not equal and a first angle. The photoresist is dry etched using dry etch parameters, at least one of which is selected based on the first angle and the first and the second widths of the first trench to form a second trench in the photoresist. The second dielectric layer is etched to form a third trench.
    Type: Application
    Filed: October 3, 2006
    Publication date: April 17, 2008
    Inventors: Benjamin C. Hoster, William S. Bass