Patents by Inventor Benjamin D. Bunday

Benjamin D. Bunday has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR REDUCING CHARGE IN CRITICAL DIMENSION-SCANNING ELECTRON MICROSCOPE METROLOGY
    Publication number: 20170040228
    Abstract: Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (SEM) metrology of a critical dimension (CD) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure. When the lithography structure comprising the silicon-comprising under layer is scanned for CDs using SEM, the under layer reduces or eliminates charge buildup during SEM metrological observations.
    Type: Application
    Filed: October 20, 2016
    Publication date: February 9, 2017
    Inventors: Melvin W. Montgomery, Cecilia A. Montgomery, Benjamin D. Bunday
  • METHOD FOR REDUCING CHARGE IN CRITICAL DIMENSION-SCANNING ELECTRON MICROSCOPE METROLOGY
    Publication number: 20140206112
    Abstract: Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (SEM) metrology of a critical dimension (CD) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure. When the lithography structure comprising the silicon-comprising under layer is scanned for CDs using SEM, the under layer reduces or eliminates charge buildup during SEM metrological observations.
    Type: Application
    Filed: January 17, 2014
    Publication date: July 24, 2014
    Applicants: Sematech, Inc., The Research Foundation for the State University of New York
    Inventors: MELVIN WARREN MONTGOMERY, Cecilia Annette Montgomery, Benjamin D. Bunday