Patents by Inventor Benjamin Daminlano

Benjamin Daminlano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OPTOELECTRONIC SEMICONDUCTOR STRUCTURE COMPRISING A P-TYPE INJECTION LAYER BASED ON INGAN
    Publication number: 20220140190
    Abstract: An optoelectronic semiconductor structure comprises an InGaN-based active layer disposed between an n-type injection layer and a p-type injection layer, the p-type injection layer comprising a first InGaN layer having a thickness between 50 and 350 nm and, disposed on the first layer, a second layer having a GaN surface portion.
    Type: Application
    Filed: February 25, 2020
    Publication date: May 5, 2022
    Inventors: David Sotta, Mariia Rozhavskaia, Benjamin Daminlano